Browsing by imec author "58cef5135877214a58c35135df2ae2b5129ed0e0"
Now showing items 1-20 of 98
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3D measurement of 3D NAND memory hole with CD-SEM and tilted FIB
Ohashi, Takeyoshi; Yamaguchi, Atsuko; Hasumi, Kazuhisa; Ikota, Masami; Tan, Chi Lim; Raymaekers, Tom; Van den Bosch, Geert; Furnemont, Arnaud; Lorusso, Gian (2017) -
3D TCAD model for poly-Si channel current and variability in vertical NAND flash memory
Verreck, Devin; Arreghini, Antonio; Schanovsky, Franz; Stanojevic, Zlatan; Steiner, K.; Mitterbauer, F.; Karner, Markus; Van den Bosch, Geert; Furnemont, Arnaud (2019) -
A Co/Ni-based perpendicular magnetic tunnel junction (p-MTJ) stack with improved reference layer for BEOL compatibility
Tomczak, Yoann; Lin, Tsann; Swerts, Johan; Couet, Sebastien; Mertens, Sofie; Liu, Enlong; Kim, Woojin; Sankaran, Kiroubanand; Pourtois, Geoffrey; Tsvetanova, Diana; Souriau, Laurent; Van Elshocht, Sven; Kar, Gouri Sankar; Furnemont, Arnaud (2016) -
A comparative analysis on the impact of bank contention in STT-MRAM and SRAM based LLCs
Evenblij, Timon; Perumkunnil, Manu; Catthoor, Francky; Sakhare, Sushil; Debacker, Peter; Kar, Gouri Sankar; Furnemont, Arnaud; Bueno, Nicolas; Gomez-Perez, Ignacio; Tenllado, Christian (2019) -
A consistent model for the SANOS programming operation
Furnemont, Arnaud; Rosmeulen, Maarten; Cacciato, Antonio; Breuil, Laurent; De Meyer, Kristin; Maes, Herman; Van Houdt, Jan (2007) -
A first principles study of the oscillatory behavior of tunnel magnetoresitance: On the impact of magnetic and tunneling barrier layers and of the capping metals
Sankaran, Kiroubanand; Swerts, Johan; Couet, Sebastien; Furnemont, Arnaud; Stokbro, Kurt; Pourtois, Geoffrey (2016) -
A smaller, faster and more energy-efficient complementary STT-MRAM cell uses three transistors and a ground grid: more is actually less
Appeltans, Raf; Raghavan, Praveen; Kar, Gouri Sankar; Furnemont, Arnaud; Van der Perre, Liesbet; Dehaene, Wim (2017) -
Annealing stability of magnetic tunnel junctions no dual MgO free layers and Co/Ni based synthetic antiferromagnetic reference system
Devolder, Thibaut; Couet, Sebastien; Swerts, Johan; Liu, Enlong; Lin, Tsann; Mertens, Sofie; Kar, Gouri Sankar; Furnemont, Arnaud (2017) -
Application of single pulse dynamics to model program anderase cycling-induced defects in the tunnel oxide of charge-trapping devices
Bastos, Joao; Arreghini, Antonio; Verreck, Devin; Schanovsky, Franz; Degraeve, Robin; Linten, Dimitri; Van den Bosch, Geert; Furnemont, Arnaud (2019) -
BEOLC compatiblehigh tunnel magneto resistance perpendicula magnetic tunnel junctions using a sacrificial Mg layer as CoFeB free layer cap
Swerts, Johan; Mertens, Sofie; Lin, Tsann; Couet, Sebastien; Tomczak, Yoann; Sankaran, Kiroubanand; Pourtois, Geoffrey; Kim, Woojin; Meersschaut, Johan; Souriau, Laurent; Radisic, Dunja; Van Elshocht, Sven; Kar, Gouri Sankar; Furnemont, Arnaud (2015) -
Challenges with SOT-MRAM integration towards N5 node and beyond
Gupta, Mohit; Perumkunnil, Manu; Yasin, Farrukh; Mirabelli, Gioele; Garello, K.; Gupta, Anshul; Furnemont, Arnaud; Kar, Gouri Sankar (2022) -
Channel and gate stack charge trapping investigation in vertical 3D NAND devices with poly-silicon channel
Subirats, Alexandre; Arreghini, Antonio; Breuil, Laurent; Degraeve, Robin; Van den Bosch, Geert; Linten, Dimitri; Furnemont, Arnaud (2017) -
Channel and near channel defects characterization in vertical InxGa1-xAs high mobility channels for future 3D NAND memory
Subirats, Alexandre; Capogreco, Elena; Degraeve, Robin; Arreghini, Antonio; Van den Bosch, Geert; Linten, Dimitri; Van Houdt, Jan; Furnemont, Arnaud (2016) -
Characterization, modeling and optimization of silicon nitride based nonvolatile Flash memories
Furnemont, Arnaud (2007-11) -
[Co/Ni]-CoFeB hybrid free layer stack materials for high density magnetic random access memory applications
Liu, Enlong; Swerts, Johan; Couet, Sebastien; Mertens, Sofie; Tomczak, Yoann; Lin, Tsann; Spampinato, Valentina; Franquet, Alexis; Van Elshocht, Sven; Kar, Gouri Sankar; Furnemont, Arnaud; De Boeck, Jo (2016) -
Corner enhancement of FNT program/erase operations in nitride storage FinFlash devices
Breuil, Laurent; Rosmeulen, Maarten; Loo, Josine; Furnemont, Arnaud; Haspeslagh, Luc; Van Houdt, Jan (2007) -
Cross-layer design and analysis of al ow power, high density STT-MRAM for embedded systems
Perumkunnil, Manu; Sakhare, Sushil; Huynh Bao, Trong; Rao, Siddharth; Kim, Woojin; Tenllado, Christian; Gomez, Jose Ignacio; Kar, Gouri Sankar; Furnemont, Arnaud; Catthoor, Francky (2017) -
Cryogenic cooling post MgO promoting the free layer coercivity and TMR in perpendicular bottom pinned Co/Ni STT-MRAM device stacks
Swerts, Johan; Mertens, Sofie; Couet, Sebastien; Lin, Tsann; Liu, Enlong; Rao, Siddharth; Kim, Woojin; Van Elshocht, Sven; Kar, Gouri Sankar; Furnemont, Arnaud; Nishimura, Kazumasa; Okuyama, Hiroki; Seino, Takuya; Tsunekawa, Koji (2016) -
Design exploration of IGZO diode based VCMA array design for Storage Class Memory Applications
Gupta, Mohit; Perumkunnil, Manu; Fantini, Andrea; Alinezhad Chamazcoti, Saeideh; Kim, Woojin; Garcia Bardon, Marie; Kar, Gouri Sankar; Furnemont, Arnaud (2022) -
Design Technology co-optimization of 1D-1VCMA to improve read performance for SCM applications
Gupta, Mohit; Perumkunnil, Manu; Biswas, Dwaipayan; Alinezhad Chamazcoti, Saeideh; Kar, Gouri Sankar; Furnemont, Arnaud; Ryckaert, Julien (2023-07-21)