Browsing by author "Trauwaert, Marie-Astrid"
Now showing items 1-18 of 18
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A Study on the Microscopical and Macroscopical Effects of Hydrogenation on the Performance of Multicrystalline Solar Cells
Rosmeulen, Maarten; El Gamel, Hussam; Poortmans, Jef; Trauwaert, Marie-Astrid; Vanhellemont, Jan; Nijs, Johan (1994) -
Defects in As-grown silicon and their evolution during heat treatments
Vanhellemont, Jan; Dornberger, E.; Esfandyari, J.; Kissinger, G.; Trauwaert, Marie-Astrid; Bender, Hugo; Gräf, D.; Lambert, U.; von Ammon, W. (1997) -
Differential interference contrast microscopy of defects in As-grown and annealed Si wafers
Trauwaert, Marie-Astrid; Vanhellemont, Jan; Lambert, U.; Gräf, D.; Kenis, Karine; Mertens, Paul; Heyns, Marc (1997) -
Evaluation of Si surface conditions by the use of surface photovoltage technique
Trauwaert, Marie-Astrid; Kenis, Karine; Caymax, Matty; Mertens, Paul; Heyns, Marc; Vanhellemont, J.; Gräf, D.; Wagner, P. (1998) -
Generation and annealing behaviour of MeV proton and 252Cf irradiation induced deep levels in silicon diodes
Vanhellemont, Jan; Kaniava, Arvydas; Simoen, Eddy; Trauwaert, Marie-Astrid; Claeys, Cor (1994) -
Generation and annealing behaviour of MeV proton and 252Cf irradiation induced deep levels in silicon diodes
Vanhellemont, Jan; Kaniava, Arvydas; Simoen, Eddy; Trauwaert, Marie-Astrid; Claeys, Cor; Johlander, B.; Harboe-Sörensen, R.; Adams, L. (1994) -
In-line monitoring of HF-last cleaning of implanted and non-implanted silicon surfaces by non-contact surface charge measurements
Kondoh, Eiichi; Trauwaert, Marie-Astrid; Heyns, Marc; Maex, Karen (1998) -
Influence of oxygen and carbon on the generation and annihilation of radiation defects in silicon
Trauwaert, Marie-Astrid; Vanhellemont, Jan; Maes, Herman; Van Bavel, Mieke; Langouche, G.; Stesmans, Andre; Clauws, P. (1996) -
Low Temperature Anneal of Electron Irradiation Induced Defects in p-Type Silicon
Trauwaert, Marie-Astrid; Vanhellemont, Jan; Maes, Herman; Van Bavel, Mieke; Langouche, G.; Clauws, P. (1994) -
Low temperature anneal of electron irradiation induced defects in p-type silicon
Trauwaert, Marie-Astrid; Vanhellemont, Jan; Maes, Herman; Van Bavel, Mieke; Langouche, G.; Clauws, P. (1998) -
Low temperature anneal of the divacancy in p-type silicon
Trauwaert, Marie-Astrid; Vanhellemont, Jan; Maes, Herman; Van Bavel, Mieke; Langouche, G.; Stesmans, Andre; Clauws, P. (1995) -
Low Temperature Anneal of the Divacancy in p-Type Silicon
Trauwaert, Marie-Astrid; Vanhellemont, Jan; Maes, Herman; Van Bavel, Mieke; Langouche, G.; Clauws, P. (1994) -
Low-temperature anneal of the divacancy in p-type silicon: a transformation from V2 to VxOy complexes
Trauwaert, Marie-Astrid; Vanhellemont, Jan; Maes, Herman; Van Bavel, Mieke; Langouche, G.; Clauws, P. (1995) -
Low-temperature annealing studies in the divacancy in p-type silicon
Trauwaert, Marie-Astrid (1996) -
Measurement, modelling and simulation of defects in as-grown Czrochalski silicon
Vanhellemont, Jan; Senkader, S.; Kissinger, G.; Higgs, V.; Trauwaert, Marie-Astrid; Graef, D.; Lambert, U.; Wagner, Patrick (1997) -
On the behaviour of the divacancy in silicon during anneals between 150 and 350 C
Trauwaert, Marie-Astrid; Vanhellemont, Jan; Maes, Herman; Van Bavel, Mieke; Langouche, G.; Stesmans, Andre; Clauws, P. (1995) -
Radiation and Impurity Related Deep Levels in Si: A Deep Level Transient Spectroscopy Study Correlated with Other Spectroscopic Techniques
Trauwaert, Marie-Astrid (1995-12) -
Study of point defects in silicon by means of positron annihilation with core electrons
Kuriplach, J.; Van Hoecke, T.; Van Waeyenberge, B.; Dauwe, C.; Segers, D.; Balcaen, N.; Morales, A. L.; Trauwaert, Marie-Astrid; Vanhellemont, Jan; Sob, M. (1997)