Browsing by author "Yoshino, Kenji"
Now showing items 1-4 of 4
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Gate-length dependent radiation damage in 2-MeV electron-irradiated Si1-xGexS/D p-MOSFETs
Nakashima, Toshiyuki; Idemoto, Tatsuya; Tsunoda, Isao; Takakura, Kenichiro; Yoneoka, Masashi; Ohyama, Hidenori; Yoshino, Kenji; Simoen, Eddy; Claeys, Cor (2012) -
Increased radiation hardness of short-channel electron-irradiated Si1-xGex source/drain p-type metal oxide semiconductor field-effect transistors at higher Ge content
Nakashima, Toshiyuki; Yoneoka, Masashi; Tsunoda, Isao; Takakura, Kenichiro; Gonzalez, Mireia B; Simoen, Eddy; Claeys, Cor; Yoshino, Kenji (2013) -
Local compressive stress generation in electron irradiated boron-doped Si0.75Ge0.25/Si devices
Tsunoda, Isao; Nakashima, Toshiyuki; Naka, Noboyuki; Idemoto, Tatsuya; Yoneoka, Masahi; Takakura, Kenichiro; Yoshino, Kenji; Bargallo Gonzalez, Mireia; Simoen, Eddy; Claeys, Cor; Ohyama, Hidenori (2012) -
Radiation tolerance of Si1-yCy source/drain n-MOSFETs with different carbon concentrations
Asai, Yuki; Hori, Masato; Yoneda, Masashi; Tsunoda, Isao; Takakura, Kenichiro; Bargallo Gonzalez, Mireia; Simoen, Eddy; Claeys, Cor; Yoshino, Kenji (2013)