Browsing by author "Afanasiev, Valeri"
Now showing items 41-60 of 161
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Electron band alignment at the interface of (100)GaSb with molecular-beam deposited Al2O3
Afanasiev, Valeri; Chou, H.-Y.; Stesmans, Andre; Merckling, Clement; Sun, Xiao (2011) -
Electron barrier height at CuxTe1-x/Al2O3 interfaces of conducting bridgememory stacks
Afanasiev, Valeri; De Stefano, Francesca; Houssa, Michel; Stesmans, Andre; Goux, Ludovic; Opsomer, Karl; Kittl, Jorge; Jurczak, Gosia (2013) -
Electron energy band alignment at interfaces of (100)Ge with Gd2O3 and LaHfO
Afanasiev, Valeri; Shamuilia, Sheron; dimoulas, A.; Stesmans, Andre; Houssa, Michel (2005) -
Electron spin resonance analysis of sputtering-induced defects in advanced low-k insulators (k-2.0-2.5)
Stesmans, Andre; Nguyen, A.; Houssa, Michel; Afanasiev, Valeri; Tokei, Zsolt; Baklanov, Mikhaïl (2013) -
Electron spin resonance study of defects in low-k oxide insulators (k = 2.5–2.0)
Afanasiev, Valeri; Keunen, K.; Stesmans, Andre; Jivanescu, M.; Tokei, Zsolt; Baklanov, Mikhaïl; Beyer, Gerald (2011) -
Electron trap energy distribution in ALD Al2O3, LaAl4Ox, and GdyAl2-yO3 layers on silicon
Wang, Mugwort; Badylevich, M.; Adelmann, Christoph; Swerts, Johan; Kittl, Jorge; Afanasiev, Valeri (2012) -
Electronic properties and conduction defects from first principles in doped GexSe1-x materials for selector applications
Clima, Sergiu; Opsomer, Karl; Devulder, Wouter; Goux, Ludovic; Afanasiev, Valeri; Kar, Gouri Sankar; Pourtois, Geoffrey (2018) -
Electronic properties of Ge dangling bond centres at Si1-xGex/SiO2 interfaces
Afanasiev, Valeri; Houssa, Michel; Stesmans, Andre; Souriau, Laurent; Loo, Roger; Meuris, Marc (2009) -
Electronic structure of GeO2-passivated interfaces of (100)Ge with Al2O3 and HfO2
Afanasiev, Valeri; Stesmans, Andre; Delabie, Annelies; Houssa, Michel (2007) -
Electrostatic potential perturbation at the polycrystalline Si/HfO2 interface
Afanasiev, Valeri; Stesmans, Andre; Pantisano, Luigi; P. J. Chen, (2005) -
Enabling 3X nm DRAM: Record low leakage 0.4 nm EOT MIM capacitors with novel stack engineering
Pawlak, Malgorzata; Popovici, Mihaela Ioana; Swerts, Johan; Tomida, Kazuyuki; Kim, Min-Soo; Kaczer, Ben; Opsomer, Karl; Schaekers, Marc; Favia, Paola; Bender, Hugo; Vrancken, Christa; Govoreanu, Bogdan; Demeurisse, Caroline; Wang, Wan-Chih; Afanasiev, Valeri; Debusschere, Ingrid; Altimime, Laith; Kittl, Jorge (2010) -
Energy barriers at interfaces between (100) InxGa1-xAs(0<=x<=0.53) and atomic layer deposited Al2O3 and HfO2
Afanasiev, Valeri; Stesmans, Andre; Brammertz, Guy; Delabie, Annelies; Sioncke, Sonja; O'Mahony, E; Povey, I.M.; Pemble, M.E.; O'Connor, E.; Hurley, P.K.; Newcomb, S.B. (2009) -
Energy barriers at interfaces of 100GaAs with atomic layer deposited Al2O3 and HfO2
Afanasiev, Valeri; Badylevich, M; Stesmans, Andre; Brammertz, Guy; Delabie, Annelies; Sioncke, Sonja; O'Mahony, A; Povey, I M; Pemble, M E; O'Connor, E; Hurley, P; Newcomb, Simon (2008) -
Evidences of anodic-oxidation reset mechanism in TiN\NiO\Ni RRAM cells
Goux, Ludovic; Degraeve, Robin; Govoreanu, Bogdan; Chou, H.-Y.; Afanasiev, Valeri; Meersschaut, Johan; Toeller, Michael; Wang, X.P.; Kubicek, Stefan; Richard, Olivier; Kittl, Jorge; Wouters, Dirk; Jurczak, Gosia; Altimime, Laith (2011) -
Experimental characterization of BTI defects
Kaczer, Ben; Afanasiev, Valeri; Rott, Karina; Cerbu, F.; Franco, Jacopo; Grasser, Tibor; Madia, O.; Nguyen, A. P. D.; Stesmans, Andre; Resinger, Hans; Toledano Luque, Maria; Weckx, Pieter (2013) -
Experimental Study Of Interface & Bulk Defectivity In Ultra-Thin BEOL Dielectrics By Using Low Frequency Noise Spectroscopy
Saini, Nishant; Tierno, Davide; Croes, Kristof; Afanasiev, Valeri (2023) -
First-principles electronic functionalization of silicene and germanene by adatom chemisorption
van den broek, Bas; Houssa, Michel; Scalise, Emilio; Pourtois, Geoffrey; Afanasiev, Valeri; Stesmans, Andre (2014) -
First-principles study of strained 2d MoS2
Scalise, Emilio; Houssa, Michel; Pourtois, Geoffrey; Afanasiev, Valeri; Stesmans, Andre (2014) -
First-principles study of the electronic properties of Ge dangling bonds at the (100) Si1xGex /SiO2 interfaces
Houssa, Michel; Afanasiev, Valeri; Stesmans, Andre; Pourtois, Geoffrey; Meuris, Marc; Heyns, Marc (2009) -
Flat-band voltage shift of Ruthenium gated stacks and its link with the formation of a thin Ruthenium oxide layer at the Ruthenium/dielectric interface
Li, Zilan; Schram, Tom; Pantisano, Luigi; Stesmans, Andre; Conard, Thierry; Shamuilia, Sheron; Afanasiev, Valeri; Akheyar, Amal; Van Elshocht, Sven; Brunco, David; Deweerd, Wim; Naoki, Yamada; Lehnen, Peer; De Gendt, Stefan; De Meyer, Kristin (2007-02)