Now showing items 1-20 of 50

    • 3D stacked IC demonstration using a through silicon via first approach 

      Van Olmen, Jan; Mercha, Abdelkarim; Katti, Guruprasad; Huyghebaert, Cedric; Van Aelst, Joke; Seppala, Emma; Zhao, Chao; Armini, Silvia; Vaes, Jan; Cotrin Teixeira, Ricardo; Van Cauwenberghe, Marc; Verdonck, Patrick; Verhemeldonck, Koen; Jourdain, Anne; Ruythooren, Wouter; de Potter de ten Broeck, Muriel; Opdebeeck, Ann; Chiarella, Thomas; Parvais, Bertrand; Debusschere, Ingrid; Hoffmann, Thomas Y.; De Wachter, Bart; Dehaene, Wim; Stucchi, Michele; Rakowski, Michal; Soussan, Philippe; Cartuyvels, Rudi; Beyne, Eric; Biesemans, Serge; Swinnen, Bart (2008)
    • 3D stacked ICs using Cu TSVs and die to wafer hybrid collective bonding 

      Katti, Guruprasad; Mercha, Abdelkarim; Van Olmen, Jan; Huyghebaert, Cedric; Jourdain, Anne; Stucchi, Michele; Rakowski, Michal; Debusschere, Ingrid; Soussan, Philippe; Dehaene, Wim; De Meyer, Kristin; Travaly, Youssef; Beyne, Eric; Biesemans, Serge; Swinnen, Bart (2009)
    • 90nm RF CMOS technology for low-power 900MHz applications 

      Ramos, Javier; Mercha, Abdelkarim; Jeamsaksiri, Wutthinan; Linten, Dimitri; Jenei, Snezana; Rooyackers, Rita; Verbeeck, Rita; Thijs, Steven; Scholten, Andries; Wambacq, Piet; Debusschere, Ingrid; Decoutere, Stefaan (2004)
    • A 90nm RF CMOS technology supported by device modelling and circuit demonstrators 

      Ramos, Javier; Mercha, Abdelkarim; Jeamsaksiri, Wutthinan; Linten, Dimitri; Jenei, Snezana; Thijs, Steven; Scholten, Andries; Wambacq, Piet; Debusschere, Ingrid; Decoutere, Stefaan (2004)
    • A low cost 90nm RF-CMOS platform for record RF circuit performance 

      Jeamsaksiri, Wutthinan; Linten, Dimitri; Thijs, Steven; Carchon, Geert; Ramos, Javier; Mercha, Abdelkarim; Sun, Xiao; Soussan, Philippe; Dehan, Morin; Chiarella, Thomas; Venegas, Rafael; Subramanian, Vaidy; Scholten, A.; Wambacq, Piet; Velghe, Rudolf; Mannaert, Geert; Heylen, Nancy; Verbeeck, Rita; Boullart, Werner; Heyvaert, Ilse; Mahadeva Iyer, Natarajan; Groeseneken, Guido; Debusschere, Ingrid; Biesemans, Serge; Decoutere, Stefaan (2005-06)
    • A low thermal budget pre metal dielectric stack using PECVD and HDP processing 

      Schaekers, Marc; De Jaeger, Brice; Sleeckx, Erik; Debusschere, Ingrid; Van Hove, Marleen; Lauwers, A.; Hauf, H. (2001)
    • A novel PEALD tunnel dielectric for three-dimensional non-volatile charge-trapping technology 

      Cacciato, Antonio; Breuil, Laurent; Dekkers, Harold; Zahid, Mohammed; Kar, Gouri Sankar; Everaert, Jean-Luc; Schoofs, Geert; Shi, Qixian; Van den Bosch, Geert; Jurczak, Gosia; Debusschere, Ingrid; Van Houdt, Jan; Cockburn, Andrew; Date, Lucien; Xa, Li Qun; Le, Maggie; Lee, Won (2011)
    • A novel PEALD tunnel dielectric for three-dimensional non-volatile charge-trapping technology 

      Cacciato, Antonio; Breuil, Laurent; Dekkers, Harold; Zahid, Mohammed; Kar, Gouri Sankar; Everaert, Jean-Luc; Schoofs, Geert; Van den Bosch, Geert; Jurczak, Gosia; Debusschere, Ingrid; Van Houdt, Jan; Cockburn, Andrew; Date, Lucien; Xa, Li-Qun; Le, Maggie; Lee, Won (2010)
    • Advanced capacitor dielectrics: towards 2x nm DRAM 

      Kim, Min-Soo; Popovici, Mihaela Ioana; Swerts, Johan; Pawlak, Malgorzata; Tomida, Kazuyuki; Kaczer, Ben; Opsomer, Karl; Schaekers, Marc; Tielens, Hilde; Vrancken, Christa; Van Elshocht, Sven; Debusschere, Ingrid; Altimime, Laith; Kittl, Jorge (2011-05)
    • ALD strontium titanates and their characterization 

      Popovici, Mihaela Ioana; Van Elshocht, Sven; Tomida, Kazuyuki; Menou, Nicolas; Swerts, Johan; Pawlak, Malgorzata; Kaczer, Ben; Kim, Min-Soo; Brijs, Bert; Favia, Paola; Conard, Thierry; Franquet, Alexis; Moussa, Alain; Debusschere, Ingrid; Altimime, Laith; Kittl, Jorge (2010)
    • An active machine vision system for surface quality inspection 

      Claeys, Cor; Debusschere, Ingrid; Ricquier, Nico; Seitz, P.; Stalder, M.; Raynor, J.; Lang, G.; Cilia, G.; Cavana, C.; Müssigmann, U.; Abele, A. (1994)
    • An ultra-thin hybrid floating gate concept for sub-20nm NAND flash technologies 

      Wellekens, Dirk; Blomme, Pieter; Rosmeulen, Maarten; Schram, Tom; Cacciato, Antonio; Van Aerde, Steven; Debusschere, Ingrid; Van Houdt, Jan (2011)
    • Analysis of plasma induced gate oxide damage in multi-level metal processing 

      Yuan, Xiao Jie; Van den Bosch, Geert; Lietaer, Nicolas; Zagrebnov, Maxim; Debusschere, Ingrid; Deferm, Ludo (1998)
    • Compositional study of BaSrTiO thin films for memory application 

      Tomida, Kazuyuki; Opsomer, Karl; Vrancken, Christa; Matero, Raija; Tois, Eva; Kaczer, Ben; Pawlak, Malgorzata; Popovici, Mihaela Ioana; Swerts, Johan; Van Elshocht, Sven; Detavernier, Christophe; Kim, Min-Soo; Debusschere, Ingrid; Altimime, Laith; Kittl, Jorge (2010)
    • Copper through silicon via induced keep out zone for 10nm node bulk FinFET CMOS technology 

      Guo, Wei; Moroz, Victor; Van der Plas, Geert; Choi, M.; Redolfi, Augusto; Smith, L.; Eneman, Geert; Van Huylenbroeck, Stefaan; Su, P.D.; Ivankovic, Andrej; De Wachter, Bart; Debusschere, Ingrid; Croes, Kris; De Wolf, Ingrid; Mercha, Abdelkarim; Beyer, Gerald; Swinnen, Bart; Beyne, Eric (2013)
    • Development of silicon micropattern pixel detectors 

      Heijne, E.; Antinori, F.; Beker, H.; Batignani, G.; Beusch, W.; Bonvicini, V.; Bosisio, L.; Boutonnet, C.; Burger, P.; Campbell, M.; Cantoni, P.; Catanesi, M.; Chesi, E.; Claeys, Cor; Clemens, J.; Cohen Solal, M.; Darbo, G.; Da Via, C.; Debusschere, Ingrid; Delpierre, P.; Di Bari, D.; Di Liberto, S.; Dierickx, Bart; Enz, C.; Focardi, E.; Forti, F.; Gally, Y.; Glaser, M.; Gys, T.; Habrard, M.; Hallewell, G.; Hermans, Lou; Heuser, J.; Hurst, R.; Inzani, P.; Jaeger, J.; Jarron, P.; Karttaavi, T.; Kersten, S.; Krummenacher, F.; Leitner, R.; Lemeilleur, F.; Lenti, V.; Letheren, M.; Lokajicek, M.; Loukas, D.; Macdermott, M.; Maggi, G.; Manzari, V.; Martinengo, P.; Meddeler, G.; Meddi, F.; Mekkaoui, A.; Menetrey, A.; Middelkamp, P.; Morando, M.; Munns, A.; Musico, P.; Nava, P.; Navach, F.; Neyer, C.; Pellegrini, F.; Pengg, F.; Perego, R.; Pindo, M.; Pospisil, S.; Potheau, R.; Quercigh, E.; Redaelli, N.; Ridky, J.; Rossi, L.; Sauvage, D.; Segato, G.; Simone, S.; Sopko, B.; Stefanini, G.; Strakos, V.; Tempesta, P.; Tonelli, G.; Vegni, G.; Verweij, H.; Viertel, G.; Vrba, V.; Waisbard, J. (1994)
    • Enabling 3X nm DRAM: Record low leakage 0.4 nm EOT MIM capacitors with novel stack engineering 

      Pawlak, Malgorzata; Popovici, Mihaela Ioana; Swerts, Johan; Tomida, Kazuyuki; Kim, Min-Soo; Kaczer, Ben; Opsomer, Karl; Schaekers, Marc; Favia, Paola; Bender, Hugo; Vrancken, Christa; Govoreanu, Bogdan; Demeurisse, Caroline; Wang, Wan-Chih; Afanasiev, Valeri; Debusschere, Ingrid; Altimime, Laith; Kittl, Jorge (2010)
    • Exploration of rare earth materials for future interpoly dielectric replacement in Flash memory devices 

      Wellekens, Dirk; Van Elshocht, Sven; Adelmann, Christoph; Meersschaut, Johan; Swerts, Johan; Kittl, Jorge; Cacciato, Antonio; Debusschere, Ingrid; Jurczak, Gosia; Van Houdt, Jan (2010)
    • FUSI specific yield monitoring enabling improved circuit performance and fast feedback to production 

      Chiarella, Thomas; Rosmeulen, Maarten; Tigelaar, Howard; Kerner, Christoph; Nackaerts, Axel; Ramos, Javier; Lauwers, Anne; Veloso, Anabela; Jurczak, Gosia; Rothschild, Aude; Witters, Liesbeth; Yu, HongYu; Kittl, Jorge; Verbeeck, Rita; de Potter de ten Broeck, Muriel; Debusschere, Ingrid; Absil, Philippe; Biesemans, Serge; Hoffmann, Thomas Y. (2007-03)
    • High performance THANVaS memories for MLC charge trap NAND flash 

      Suhane, Amit; Van den Bosch, Geert; Arreghini, Antonio; Breuil, Laurent; Cacciato, Antonio; Zahid, Mohammed; Debusschere, Ingrid; De Meyer, Kristin; Van Houdt, Jan (2011)