Browsing by author "Rosseel, Erik"
Now showing items 1-20 of 230
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1.5×10-9 Ω·cm² Contact Resistivity on Highly Doped Si:P Using Ge Pre-amorphization and Ti Silicidation
Yu, Hao; Schaekers, Marc; Rosseel, Erik; Peter, Antony; Lee, Joon-Gon; Song, Woo-Bin; Demuynck, Steven; Chiarella, Thomas; Ragnarsson, Lars-Ake; Kubicek, Stefan; Everaert, Jean-Luc; Horiguchi, Naoto; Barla, Kathy; Kim, Daeyong; Collaert, Nadine; Thean, Aaron; De Meyer, Kristin (2015) -
12-EUV layer Surrounding Gate Transistor (SGT) for vertical 6-T SRAM: 5-nm-class technology for ultra-density logic devices
Kim, Min-Soo; Harada, N.; Kikuchi, Yoshiaki; Boemmels, Juergen; Mitard, Jerome; Huynh Bao, Trong; Matagne, Philippe; Tao, Zheng; Li, Waikin; Devriendt, Katia; Ragnarsson, Lars-Ake; Lorant, Christophe; Sebaai, Farid; Porret, Clément; Rosseel, Erik; Dangol, Anish; Batuk, Dmitry; Martinez Alanis, Gerardo Tadeo; Geypen, Jef; Jourdan, Nicolas; Sepulveda Marquez, Alfonso; Puliyalil, Harinarayanan; Jamieson, Geraldine; van der Veen, Marleen; Teugels, Lieve; El-Mekki, Zaid; Altamirano Sanchez, Efrain; Li, Y.; Nakamura, H.; Mocuta, Dan; Matsuoka, F. (2019) -
3D sequential CMOS top tier devices demonstration using a low temperature Smart Cu (TM) Si layer transfer
Besnard, Guillaume; Radu, Ionut; Vandooren, Anne; Wu, Zhicheng; Franco, Jacopo; Li, Waikin; Arimura, Hiroaki; Mannaert, Geert; Rosseel, Erik; Hikavyy, Andriy; Dentoni Litta, Eugenio; Horiguchi, Naoto (2021) -
3D sequential low temperature top tier devices using dopant activation with excimer laser anneal and strained silicon as performance boosters
Vandooren, Anne; Wu, Zhicheng; Parihar, Narendra; Franco, Jacopo; Parvais, Bertrand; Matagne, Philippe; Debruyn, Haroen; Mannaert, Geert; Devriendt, Katia; Teugels, Lieve; Vecchio, Emma; Radisic, Dunja; Rosseel, Erik; Hikavyy, Andriy; Chan, BT; Waldron, Niamh; Mitard, Jerome; Besnard, G.; Alvarez, A.; Gaudin, G.; Schwarzenbach, W.; Radu, I.; Nguyen, B. Y.; Huet, K.; Tabata, T.; Mazzamuto, F.; Demuynck, Steven; Boemmels, Juergen; Collaert, Nadine; Horiguchi, Naoto (2020) -
3D sequential stacked planar devices featuring low-temperature replacement metal gate junctionless top devices with improved reliability
Vandooren, Anne; Franco, Jacopo; Parvais, Bertrand; Wu, Zhicheng; Witters, Liesbeth; Walke, Amey; Li, Waikin; Peng, Lan; Deshpande, Veeresh Vidyadhar; Bufler, Fabian; Rassoul, Nouredine; Hellings, Geert; Jamieson, Geraldine; Inoue, Fumihiro; Verbinnen, Greet; Devriendt, Katia; Teugels, Lieve; Heylen, Nancy; Vecchio, Emma; Tao, Zheng; Rosseel, Erik; Vanherle, Wendy; Hikavyy, Andriy; Chan, BT; Ritzenthaler, Romain; Besnard, Guillaume; Schwarzenbach, Walter; Gaudin, Gweltaz; Radu, Ionut; Nguyen, Bich-Yen; Waldron, Niamh; De Heyn, Vincent; Mocuta, Dan; Collaert, Nadine (2018-11) -
3D sequential stacked planar devices on 300 mm wafers featuring replacement metal gate junction-less top devices processed at 525°C with improved reliability
Vandooren, Anne; Franco, Jacopo; Parvais, Bertrand; Wu, Zhicheng; Witters, Liesbeth; Walke, Amey; Li, Waikin; Peng, Lan; Deshpande, Veeresh Vidyadhar; Bufler, Fabian; Rassoul, Nouredine; Hellings, Geert; Jamieson, Geraldine; Inoue, Fumihiro; Verbinnen, Greet; Devriendt, Katia; Teugels, Lieve; Heylen, Nancy; Vecchio, Emma; Tao, Zheng; Rosseel, Erik; Vanherle, Wendy; Hikavyy, Andriy; Chan, BT; Ritzenthaler, Romain; Besnard, Guillaume; Schwarzenbach, Walter; Gaudin, Gweltaz; Radu, Ionut; Nguyen, Bich-Yen; Waldron, Niamh; De Heyn, Vincent; Mocuta, Dan; Collaert, Nadine (2018) -
A 0.35μm SiGe BiCMOS process featuring a 80 GHz Fmax HBT and integrated high-Q RF passive components
Decoutere, Stefaan; Vleugels, Frank; Kuhn, Rudiger; Loo, Roger; Caymax, Matty; Jenei, Snezana; Croon, Jeroen; Van Huylenbroeck, Stefaan; Da Rold, Martina; Rosseel, Erik; Chevalier, P.; Coppens, P. (2000) -
A comparison of arsenic and phosphorus extension by room temperature and hot ion implantation for NMOS Si bulk-FinFET at N7 (7nm) technology relevant fin dimensions
Sasaki, Yuichiro; Ritzenthaler, Romain; De Keersgieter, An; Chiarella, Thomas; Kubicek, Stefan; Rosseel, Erik; Waite, Andrew; del Agua Borniquel, Jose Ignacio; Colombeau, Benjamin; Chew, Soon Aik; Kim, Min-Soo; Schram, Tom; Demuynck, Steven; Vandervorst, Wilfried; Horiguchi, Naoto; Mocuta, Dan; Mocuta, Anda; Thean, Aaron (2015-06) -
A robust technology platform for high density silicon-based photonics integration
Absil, Philippe; Van Campenhout, Joris; Pantouvaki, Marianna; Verheyen, Peter; Rosseel, Erik; Yu, Hui; Selvaraja, Shankar; Bogaerts, Wim; Baets, Roel (2011) -
Ab initio analysis of defect formation and dopant activation in P and As co-doped Si
Nakazaki, Nobuya; Rosseel, Erik; Porret, Clément; Hikavyy, Andriy; Loo, Roger; Horiguchi, Naoto; Pourtois, Geoffrey (2019) -
Accurate micro Hall effect measurement on scribe line pads
Osterberg, Frederik; Petersen, Dirch; Wang, Fei; Rosseel, Erik; Vandervorst, Wilfried; Hansen, Ole (2009) -
Advanced 2D/3D simulations for laser annealed device using an atomic kinetic monte carlo approach and scanning spreading resistance microscopy (SRRM)
Noda, T.; Eyben, Pierre; Vandervorst, Wilfried; Vrancken, Christa; Rosseel, Erik; Ortolland, Claude; Clarysse, Trudo; Goossens, Jozefien; De Keersgieter, An; Felch, S.; Schreutelkamp, Rob; Absil, Philippe; Jurczak, Gosia; De Meyer, Kristin; Biesemans, Serge; Hoffmann, Thomas Y. (2008) -
Advanced processes for Si:P and Si:C:P epitaxial growth and low-temperature surface cleaning
Profijt, Harald; Rosseel, Erik; Tolle, John; Weeks, K.D.; Loo, Roger; Mehta, Sandeep; Maes, Jan (2014-11) -
Advanced use of therma-probe for ultra-shallow junction monitoring
Bogdanowicz, Janusz; Clarysse, Trudo; Smets, Gerrit; Rosseel, Erik; Vandervorst, Wilfried (2011) -
Advanced USJ for high-k / metal gate CMOS devices
Absil, Philippe; Ortolland, Claude; Aoulaiche, Marc; Rosseel, Erik; Verheyen, Peter; Vrancken, Christa; Horiguchi, Naoto; Noda, Tajii; Felch, Susan; Schreutelkamp, Rob; Hoffmann, Thomas Y. (2008) -
Analysis of As, P diffusion and defect evolution during sub-millisecond non-melt laser annealing based on an atomistic kinetic Monte Carlo approach
Noda, Taiji; Vandervorst, Wilfried; Felch, S.; Parihar, V.; Cuperus, Aldert; Mcintosh, R.; Vrancken, Christa; Rosseel, Erik; Bender, Hugo; Van Daele, Benny; Niwa, Masaaki; Umimoto, H.; Schreutelkamp, Rob; Absil, Philippe; Jurczak, Gosia; De Meyer, Kristin; Biesemans, Serge; Hoffmann, Thomas Y. (2007) -
Analysis of dopant diffusion and defects in SiGe channel quantum well for laser annealed device using an atomistic kinetic Monte Carlo approach
Noda, Taji; Witters, Liesbeth; Mitard, Jerome; Rosseel, Erik; Hellings, Geert; Vrancken, Christa; Bender, Hugo; Hoffmann, T.Y.; Horiguchi, Naoto; Vandervorst, Wilfried (2011) -
Analysis of pocket profile deactivation and its impact on Vth variation for laser annealed device using an atomistic kinetic Monte Carlo approach
Noda, Taichi; Vandervorst, Wilfried; Vrancken, Christa; Ortolland, Claude; Rosseel, Erik; Absil, Philippe; Biesemans, Serge; Hoffmann, Thomas Y. (2010) -
Application of Cl2 for low temperature etch and epitaxy
Hikavyy, Andriy; Porret, Clément; Rosseel, Erik; Loo, Roger (2018) -
Application of Cl2 for low temperature etch and epitaxy
Hikavyy, Andriy; Porret, Clément; Rosseel, Erik; Milenin, Alexey; Loo, Roger (2019)