Browsing by author "D'Hondt, Mark"
Now showing items 1-20 of 33
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4-mW microcavity LED at 650 nm on germanium substrates
D'Hondt, Mark; Modak, Prasanta; Delbeke, Danaë; Moerman, Ingrid; Van Daele, Peter; Baets, Roel; Demeester, Piet; Mijlemans, P. (2000) -
5.2% efficiency InAlGaP microcavity LEDs at 640nm on Ge substrates
Modak, Prasanta; D'Hondt, Mark; Moerman, Ingrid; Van Daele, Peter; Mijlemans, P.; Demeester, Piet (2001) -
(Al)GaInP multiquantum well LEDs on GaAs and Ge
Modak, Prasanta; D'Hondt, Mark; Mijlemans, P.; Moerman, Ingrid; Van Daele, Peter; Demeester, Piet (2000) -
(Al)GaInP multiquantum well LEDs on Ge and GaAs
Modak, Prasanta; D'Hondt, Mark; Moerman, Ingrid; Van Daele, Peter; Demeester, Piet; Vanhollebeke, Koen; Mijlemans, P. (1999) -
AlGaInP microcavity light-emitting diodes at 650 nm on Ge substrates
Modak, Prasanta; D'Hondt, Mark; Delbeke, Danaë; Moerman, Ingrid; Van Daele, Peter; Baets, Roel; Demeester, Piet; Mijlemans, P. (2000) -
Characterisation of 2% mismatched InGaAs and InAsP layers, grown on different buffer layers and at different growth temperatures
D'Hondt, Mark; Moerman, Ingrid; Demeester, Piet (1997) -
Characterisation of 2% mismatched InGaAs layers, grown on different bufferlayers and at different growth temperatures
D'Hondt, Mark; Moerman, Ingrid; Demeester, Piet (1996) -
Comparison of Different Buffer Layers for 1.9% Lattice-Mismatched InGaAs on InP for 2.5 mm Wavelength Photodetector Application
D'Hondt, Mark; Moerman, Ingrid; Demeester, Piet (1995) -
Dark current optimisation for MOVPE grown 2.5μm wavelength InGaAs photodetectors
D'Hondt, Mark; Moerman, Ingrid; Demeester, Piet (1998) -
Dark current optimisation of 2.5μm wavelength, 2% mismatched InGaAs photodetectors on InP
D'Hondt, Mark; Moerman, Ingrid; Demeester, Piet (1998) -
Dark current reduction for 2.5mm wavelength, 2% mismatched InGaAs photodetectors, by changing bufferlayer structure and growth temperature
D'Hondt, Mark; Moerman, Ingrid; Demeester, Piet (1996) -
Development of InAlGaP-materials on Ge-substrates for red light emitters, using a safe MOVPE-process
Modak, Prasanta; D'Hondt, Mark; Moerman, Ingrid (2000) -
Germanium - The all-purpose substrate of the future
D'Hondt, Mark; Mijlemans, P.; Moerman, Ingrid; Demeester, Piet (1998) -
Germanium as a growth substrate for high quality AlGaAs/InGaAs laser diodes
D'Hondt, Mark; Derluyn, Joff; Moerman, Ingrid; Verstuyft, Steven; Van Daele, Peter; Demeester, Piet; Mijlemans, P. (1998) -
High efficiency InAlGaP microcavity LEDs on Ge-substrates
Modak, Prasanta; D'Hondt, Mark; Delbeke, Danaë; Moerman, Ingrid; Van Daele, Peter; Baets, Roel; Demeester, Piet; Mijlemans, P. (2000) -
High quality AlGaInP layers on GaAs and Ge grown by MOVPE
Modak, Prasanta; Derluyn, Joff; D'Hondt, Mark; Mijlemans, P.; Moerman, Ingrid; Demeester, Piet (1999) -
High quality InGaAs/AlGaAs lasers grown on Ge substrates
D'Hondt, Mark; Yu, Zong-Qiang; Depreter, Bart; Sys, Carl; Moerman, Ingrid; Demeester, Piet; Mijlemans, P. (1998) -
High-efficiency 650 nm thin-film light-emitting diodes
Rooman, Cathleen; Windisch, Reiner; D'Hondt, Mark; Modak, Prasanta; Moerman, Ingrid; Mijlemans, P.; Dutta, Barundeb; Borghs, Gustaaf; Vounckx, Roger; Kuijk, Maarten; Heremans, Paul (2001) -
High-efficiency thin-film light-emitting diodes at 650nm
Rooman, Cathleen; Windisch, Reiner; D'Hondt, Mark; Dutta, Barundeb; Modak, Prasanta; Mijlemans, P.; Borghs, Gustaaf; Vounckx, Roger; Moerman, Ingrid; Kuijk, Maarten; Heremans, Paul (2001) -
III-V semiconductor waveguiding devices using adiabatic tapers
Moerman, Ingrid; Vermeire, Gerrit; D'Hondt, Mark; Van Der Bauwhede, Wim; Blondelle, Johan; Coudenys, G.; Van Daele, Peter; Demeester, Piet (1994)