Browsing by author "You, Shuzhen"
Now showing items 1-20 of 81
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A 400GHz fMAX fully self-aligned SiGe:C HBT architecture
Van Huylenbroeck, Stefaan; Sibaja-Hernandez, Arturo; Venegas, Rafael; You, Shuzhen; Winderickx, Gillis; Radisic, Dunja; Lee, Willie; Ong, Patrick; Vandeweyer, Tom; Nguyen, Duy; De Meyer, Kristin; Decoutere, Stefaan (2009-10) -
AlON gate dielectric and gate trench cleaning for improved relia-bility of vertical GaN MOSFET
Filho Goncalez, Walter; Borga, Matteo; Geens, Karen; Cingu, Deepthi; Chatterjee, Urmimala; You, Shuzhen; Bakeroot, Benoit; Decoutere, Stefaan; Knaepen, Werner; Arnou, Panagiota; Homm, Pia (2022) -
An industry-ready 200 mm p-GaN E-mode GaN-on-Si power technology
Posthuma, Niels; You, Shuzhen; Stoffels, Steve; Wellekens, Dirk; Liang, Hu; Zhao, Ming; De Jaeger, Brice; Geens, Karen; Ronchi, Nicolo; Decoutere, Stefaan; Moens, Peter; Banerjee, Abhishek; Ziad, Hocine; Tack, Marnix (2018) -
Analysis of off-state leakage mechanisms in GaN-based MIS-HEMTs: experimental data and numerical simulation
Marino, F.A.; Bisi, D.; Meneghini, M.; Verzellesi, G.; Zanoni, E.; Van Hove, Marleen; You, Shuzhen; Decoutere, Stefaan; Marcon, Denis; Stoffels, Steve; Ronchi, Nicolo; Meneghesso, G. (2015) -
Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics
Wu, Tian-Li; Marcon, Denis; Ronchi, Nicolo; Bakeroot, Benoit; You, Shuzhen; Stoffels, Steve; Van Hove, Marleen; Bisi, Davide; Meneghini, Matteo; Groeseneken, Guido; Decoutere, Stefaan (2015) -
Analysis of the gate capacitance-voltage characteristics in p-GaN/AlGaN/GaN heterostructures
Wu, Tian-Li; Bakeroot, Benoit; Liang, Hu; Posthuma, Niels; You, Shuzhen; Ronchi, Nicolo; Stoffels, Steve; Marcon, Denis; Decoutere, Stefaan (2017) -
Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs
Mukherjee, Kalparupa; Borga, Matteo; Ruzzarin, Maria; De Santi, Carlo; Stoffels, Steve; You, Shuzhen; Geens, Karen; Liang, Hu; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo (2020) -
Application of scanning spreading resistance microscopy (SSRM) for GaN-on-silicon power structures
Kandaswamy, Prem Kumar; Saripalli, Yoga; Van Hove, Marleen; You, Shuzhen; Zhao, Ming; Liang, Hu; Vanhaeren, Danielle; Vanderheyden, Annelies; Schulze, Andreas; Eyben, Pierre; Decoutere, Stefaan; Langer, Robert; Vandervorst, Wilfried (2014) -
Arsenic-doped Ge-spiked monoemitter SiGe:C HBTs by means of low-temperature trisilane based epitaxy
You, Shuzhen; Decoutere, Stefaan; Nguyen, Duy; Van Huylenbroeck, Stefaan; Sibaja-Hernandez, Arturo; Venegas, Rafael; Loo, Roger; De Meyer, Kristin (2011) -
Arsenic-doped Ge-spiked monoemitter SiGe:C heterojunction bipolar transistors by low-temperature trisilane based chemical vapor deposition
You, Shuzhen; Decoutere, Stefaan; Nguyen, Duy; Van Huylenbroeck, Stefaan; Sibaja-Hernandez, Arturo; Venegas, Rafael; Loo, Roger; De Meyer, Kristin (2012) -
Au-free AlGaN/GaN power diode on 8 in Si substrate with gated edge termination
Lenci, Silvia; De Jaeger, Brice; Carbonell, Laure; Hu, Jie; Mannaert, Geert; Wellekens, Dirk; You, Shuzhen; Bakeroot, Benoit; Decoutere, Stefaan (2013) -
Au-free low temperature ohmic contacts for AlGaN/GaN power devices on 200 mm substrates
Firrincieli, Andrea; De Jaeger, Brice; You, Shuzhen; Wellekens, Dirk; Van Hove, Marleen; Decoutere, Stefaan (2013-09) -
Au-free ohmic contacts for AlGaN/GaN power devices on 200 mm Si substrates
Firrincieli, Andrea; De Jaeger, Brice; You, Shuzhen; Wellekens, Dirk; Van Hove, Marleen; Decoutere, Stefaan (2014) -
Breakdown investigation in GaN-based MIS-HEMT devices
Marino, Fabio; Bisi, Davide; Meneghini, Matteo; Verzellesi, Giovanni; Zanoni, Enrico; Van Hove, Marleen; You, Shuzhen; Decoutere, Stefaan; Marcon, Denis; Stoffels, Steve; Ronchi, Nicolo; Meneghesso, Gaudio (2014) -
Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization
Mukherjee, Kalparupa; De Santi, Carlo; Borga, Matteo; Geens, Karen; You, Shuzhen; Bakeroot, Benoit; Decoutere, Stefaan; Diehle, Patrick; Huebner, Susanne; Altmann, Frank; Buffolo, Matteo; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo (2021) -
Compact Modeling of Nonideal Trapping/Detrapping Processes in GaN Power Devices
Modolo, N.; De Santi, C.; Baratella, Giulio; Bettini, A.; Borga, Matteo; Posthuma, Niels; Bakeroot, Benoit; You, Shuzhen; Decoutere, Stefaan; Bevilaqua, A.; Neviani, A.; Meneghesso, G.; Zanoni, E.; Meneghini, M. (2022) -
Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors
Mukherjee, Kalparupa; De Santi, Carlo; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo; You, Shuzhen; Geens, Karen; Borga, Matteo; Bakeroot, Benoit; Decoutere, Stefaan (2020) -
Demonstration of GaN integrated half-bridge with on-chip drivers on 200-mm engineered substrates
Li, Xiangdong; Geens, Karen; Zhao, Ming; You, Shuzhen; Wischmeyer, Frank; Odnoblyudov, Vladimir; Groeseneken, Guido; Decoutere, Stefaan (2019) -
Demonstration of High-quality GaN Epitaxy on 200 mm Engineered Substrates for Vertical Power Device Fabrication
Geens, Karen; Herwig, Hahn; Liang, Hu; Borga, Matteo; Cingu, Deepthi; You, Shuzhen; Marx, Matthias; Oligschlaeger, Robert; Fahle, Dirk; Heuken, Michael; Odnoblyudov, Vladimir; Aktas, Ozgur; Basceri, Cem; Decoutere, Stefaan (2021) -
Device breakdown optimization of Al2O3/GaN E-mode MISFETs
Kang, Xuanwu; Wellekens, Dirk; Van Hove, Marleen; De Jaeger, Brice; Ronchi, Nicolo; Wu, Tian-Li; You, Shuzhen; Bakeroot, Benoit; Hu, Jie; Marcon, Denis; Stoffels, Steve; Decoutere, Stefaan (2016)