Browsing by author "Langouche, G."
Now showing items 21-40 of 52
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Growth of high-quality buried Y- and (Y, Nd)-silicide layers prepared by channelled ion implantation
Jin, S.; Bender, Hugo; Wu, Ming Fang; Vantomme, Andre; Hogg, S.; Pattyn, H.; Langouche, G. (1998) -
High quality GdSi1.7 layers formed by high dose channeled implantation
Wu, Ming Fang; Vantomme, Andre; Pattyn, Hugo; Langouche, G.; Bender, Hugo (1996) -
HREM characterization of ion beam synthesized ternary silicides in (111) silicon
Tavares, J.; Bender, Hugo; Wu, Ming Fang; Vantomme, Andre; Langouche, G.; Lin, Chia-Hui (1995) -
Influence of oxygen and carbon on the generation and annihilation of radiation defects in silicon
Trauwaert, Marie-Astrid; Vanhellemont, Jan; Maes, Herman; Van Bavel, Mieke; Langouche, G.; Stesmans, Andre; Clauws, P. (1996) -
Influence of SiGe thickness on the Co/SiGe/Si solid state reaction
Alves Donaton, Ricardo; Jin, S.; Bender, Hugo; Maex, Karen; Vantomme, Andre; Langouche, G. (1999) -
Ion beam synthesis of buried CoxNi1-xSi2 layers in silicon
Wu, Ming Fang; De Wachter, Jo; Van Bavel, Mieke; Pattyn, H.; Langouche, G.; Vanhellemont, Jan; Bender, Hugo; Temst, K.; Bruynseraede, Y. (1994) -
Ion beam synthesis of buried CoxNi1-xSi2 layers in silicon
Wu, Ming Fang; De Wachter, Jo; Van Bavel, Mieke; Pattyn, H.; Langouche, G.; Vanhellemont, Jan; Bender, Hugo; Temst, K.; Wuyts, Bart; Bruynseraede, Y. (1994) -
Ion beam synthesis of heteroepitaxial erbium silicide layers
Wu, Ming Fang; Vantomme, Andre; Pattyn, H.; Langouche, G.; Bender, Hugo (1996) -
Ion beam synthesis of ternary phase CoFe-silicide in (111)Silicon
Tavares, J.; Bender, Hugo; Wu, Ming Fang; Vantomme, Andre; Langouche, G.; Lin, Chia-Hui (1995) -
Low Temperature Anneal of Electron Irradiation Induced Defects in p-Type Silicon
Trauwaert, Marie-Astrid; Vanhellemont, Jan; Maes, Herman; Van Bavel, Mieke; Langouche, G.; Clauws, P. (1994) -
Low temperature anneal of electron irradiation induced defects in p-type silicon
Trauwaert, Marie-Astrid; Vanhellemont, Jan; Maes, Herman; Van Bavel, Mieke; Langouche, G.; Clauws, P. (1998) -
Low temperature anneal of the divacancy in p-type silicon
Trauwaert, Marie-Astrid; Vanhellemont, Jan; Maes, Herman; Van Bavel, Mieke; Langouche, G.; Stesmans, Andre; Clauws, P. (1995) -
Low Temperature Anneal of the Divacancy in p-Type Silicon
Trauwaert, Marie-Astrid; Vanhellemont, Jan; Maes, Herman; Van Bavel, Mieke; Langouche, G.; Clauws, P. (1994) -
Low-temperature anneal of the divacancy in p-type silicon: a transformation from V2 to VxOy complexes
Trauwaert, Marie-Astrid; Vanhellemont, Jan; Maes, Herman; Van Bavel, Mieke; Langouche, G.; Clauws, P. (1995) -
Metastable and stable transistion-metal silicide layer formation in Si and SiGe
Dézsi, I.; Fetzer, C.; Bill, E.; Caymax, Matty; Pattyn, Hugo; Degroote, Sven; Langouche, G.; Vantomme, Andre (1999) -
Microstructural studies of Co silicide layers formed on SiGe and SiGeC
Jin, S.; Bender, Hugo; Donaton, R. A.; Maex, Karen; Vantomme, Andre; Langouche, G.; St. Amour, A.; Sturm, J. C. (1997) -
Microstructural studies of Co silicide layers formed on SiGe and SiGeC
Jin, S.; Bender, Hugo; Donaton, R. A.; Maex, Karen; Vantomme, Andre; Langouche, G.; St. Amour, A.; Sturm, J. C. (1997) -
New approaches for formation of ultra-thin PtSi layers for infrared applications
Alves Donaton, Ricardo; Jin, S.; Bender, Hugo; Zagrebnov, Maxim; Baert, Kris; Maex, Karen; Vantomme, Andre; Langouche, G. (1998) -
New approaches for formation of ultra-thin PtSi layers for infrared applications
Alves Donaton, Ricardo; Jin, S.; Bender, Hugo; Zagrebnov, Maxim; Baert, Kris; Maex, Karen; Vantomme, Andre; Langouche, G. (1998) -
New technique for forming continuous, smooth and uniform ultrathin (3nm) PtSi layers
Alves Donaton, Ricardo; Jin, S.; Bender, Hugo; Conard, Thierry; De Wolf, Ingrid; Maex, Karen; Vantomme, Andre; Langouche, G. (1999)