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Effect of ionizing radiation on defects and 1/f noise in Ge pMOSFETs

dc.contributor.authorZhang, Cher Xuang
dc.contributor.authorFrancis, Sarah Ashley
dc.contributor.authorZhang, En Xia
dc.contributor.authorFleetwood, Daniel M.
dc.contributor.authorSchrimpf, Ronald D.
dc.contributor.authorGalloway, Kenneth F.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorMitard, Jerome
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-19T22:14:11Z
dc.date.available2021-10-19T22:14:11Z
dc.date.issued2011
dc.identifier.issn0018-9499
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20197
dc.sourceIIOimport
dc.titleEffect of ionizing radiation on defects and 1/f noise in Ge pMOSFETs
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorMitard, Jerome
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage764
dc.source.endpage769
dc.source.journalIEEE Transactions on Nuclear Science
dc.source.issue3
dc.source.volume58
imec.availabilityPublished - open access
imec.internalnotesPaper from RADECS 2010


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