Browsing Conference contributions by author "Fantini, Andrea"
Now showing items 1-20 of 72
-
10x10nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation
Govoreanu, Bogdan; Kar, Gouri Sankar; Chen, Yangyin; Paraschiv, Vasile; Kubicek, Stefan; Fantini, Andrea; Radu, Iuliana; Goux, Ludovic; Clima, Sergiu; Degraeve, Robin; Jossart, Nico; Richard, Olivier; Vandeweyer, Tom; Seo, Kyungah; Hendrickx, Paul; Pourtois, Geoffrey; Bender, Hugo; Altimime, Laith; Wouters, Dirk; Kittl, Jorge; Jurczak, Gosia (2011) -
1TFT-1RRAM cell on polymeric substrate as non-volatile memory element enabling future flexible electronic platforms
Lebanov, Ana; Fantini, Andrea; Degraeve, Robin; Nag, Manoj; Willegems, Myriam; Smout, Steve; Steudel, Soeren; Genoe, Jan; Heremans, Paul; Myny, Kris (2018) -
90nm W\Al2O3\TiW\Cu 1T1R CBRAM cell showing low-power, fast and disturb-free operation
Belmonte, Attilio; Kim, Woosik; Chan, BT; Heylen, Nancy; Fantini, Andrea; Houssa, Michel; Jurczak, Gosia; Goux, Ludovic (2013) -
A cautionary note when looking for a truly reconfigurable resistive RAM PUF
Chuang, Kent; Degraeve, Robin; Fantini, Andrea; Groeseneken, Guido; Linten, Dimitri; Verbauwhede, Ingrid (2018) -
Asymmetrical voltage driving for memory window improvement of flexible 1TFT-1RRAM cells for future Internet-Of-Things applications
Lebanov, Ana; Fantini, Andrea; Genoe, Jan; Heremans, Paul; Myny, Kris (2019-09) -
Atomic disorder as an intrinsic source of variability in filamentary RRAM devices – ab initio investigations
Clima, Sergiu; Fantini, Andrea; Goux, Ludovic; Govoreanu, Bogdan; Jurczak, Gosia; Pourtois, Geoffrey (2016) -
Composition optimization and device understanding of Si-Ge-As-Te ovonic threshold switch selector with excellent endurance
Garbin, Daniele; Devulder, Wouter; Degraeve, Robin; Donadio, Gabriele Luca; Clima, Sergiu; Opsomer, Karl; Fantini, Andrea; Cellier, Daniel; Kim, Wan Gee; Pakala, Mahendra; Cockburn, Andrew; Detavernier, Christophe; Delhougne, Romain; Goux, Ludovic; Kar, Gouri Sankar (2019) -
Comprehensive Performance and Reliability Assessment of Se-based Selector-Only Memory
Ravsher, Taras; Degraeve, Robin; Garbin, Daniele; Clima, Sergiu; Fantini, Andrea; Donadio, Gabriele Luca; Kundu, Shreya; Devulder, Wouter; Hody, Hubert; Potoms, Goedele; Van Houdt, Jan; Afanasiev, Valeri; Belmonte, Attilio; Kar, Gouri Sankar (2024) -
Degradation mechanism of amorphous IGZO-based bipolar metal-semiconductor-metal selectors
Ravsher, Taras; Fantini, Andrea; Vaisman Chasin, Adrian; Houshmand Sharifi, Shamin; Hody, Hubert; Dekkers, Harold; Witters, Thomas; Van Houdt, Jan; Afanas'ev, Valeri; Couet, Sebastien; Kar, Gouri Sankar (2022) -
Design exploration of IGZO diode based VCMA array design for Storage Class Memory Applications
Gupta, Mohit; Perumkunnil, Manu; Fantini, Andrea; Alinezhad Chamazcoti, Saeideh; Kim, Woojin; Garcia Bardon, Marie; Kar, Gouri Sankar; Furnemont, Arnaud (2022) -
Design-technology co-optimization for OxRRAM-based synaptic processing unit
Mallik, Arindam; Garbin, Daniele; Fantini, Andrea; Rodopoulos, Dimitrios; Degraeve, Robin; Stuijt, Jan; Das, Anup Kumar; Schaafsma, Siebren; Debacker, Peter; Donadio, Gabriele Luca; Hody, Hubert; Goux, Ludovic; Kar, Gouri Sankar; Furnemont, Arnaud; Mocuta, Anda; Raghavan, Praveen (2017) -
Designing the ideal transition-metal-oxide-based RRAM stack from first-principles thermodynamics and defect kinetics
Clima, Sergiu; Chen, Yangyin; Fantini, Andrea; Chen, Michael; Goux, Ludovic; Govoreanu, Bogdan; Degraeve, Robin; Jurczak, Gosia; Pourtois, Geoffrey (2015) -
Development of a resistive memory-based, radiation-hardened cache memory for space flight and mission-critical applications
Bennett, W.; Hooten, N.; Schrimpf, R.; Reed, R.; Alles, M.; Zhang, E.X.; Weeden-Wright, S.; Jurczak, Gosia; Linten, Dimitri; Fantini, Andrea (2014) -
Doped Gd-O based RRAM for embedded application
Chen, Michael; Goux, Ludovic; Fantini, Andrea; Redolfi, Augusto; Groeseneken, Guido; Jurczak, Gosia (2016) -
Dynamic 'Hour Glass' model for SET and RESET in HfO2 RRAM
Degraeve, Robin; Fantini, Andrea; Clima, Sergiu; Govoreanu, Bogdan; Goux, Ludovic; Chen, Yangyin; Wouters, Dirk; Roussel, Philippe; Kar, Gouri Sankar; Pourtois, Geoffrey; Cosemans, Stefan; Kittl, Jorge; Groeseneken, Guido; Jurczak, Gosia; Altimime, Laith (2012) -
Dynamic modeling of radiation induced state change in HfO2/Hf 1T1R RRAM
Linten, Dimitri; Bennett, W.; Hooten, N.; Schrimpf, R.; Reed, R.; Alles, M.; Zhang, E.X.; Weeden-Wright, S.; Jurczak, Gosia; Fantini, Andrea (2014) -
Efficient reliability testing of emerging memory technologies using multiple radiation sources
Bennet, W.G.; Hooten, N.C.; Weeded-Wright, S.; Schrimpf, R.D.; Reed, R.A.; Alles, M.C.; Zhang, E.X.; Mc Curdy, M.W.; Linten, Dimitri; Jurczak, Gosia; Fantini, Andrea (2014) -
Enabling CD SEM metrology for 5nm technology node and beyond
Lorusso, Gian; Ohashi, Takeyoshi; Yamaguchi, Astuko; Inoue, Osamu; Sutani, Takumichi; Horiguchi, Naoto; Boemmels, Juergen; Wilson, Chris; Briggs, Basoene; Tan, Chi Lim; Raymaekers, Tom; Delhougne, Romain; Van den Bosch, Geert; Di Piazza, Luca; Kar, Gouri Sankar; Furnemont, Arnaud; Fantini, Andrea; Donadio, Gabriele Luca; Souriau, Laurent; Crotti, Davide; Yasin, Farrukh; Appeltans, Raf; Rao, Siddharth; De Simone, Danilo; Rincon Delgadillo, Paulina; Leray, Philippe; Charley, Anne-Laure; Zhou, Daisy; Veloso, Anabela; Collaert, Nadine; Hasumi, Kazuhisa; Koshihara, Shunsuke; Ikota, Masami; Okagawa, Yutaka; Ishimoto, Toru (2017) -
Endurance improvement of more than five orders in GexSe1-x OTS selectors by using a novel refreshing scheme
Hatem, Firas Odai Hatem; Chai, Z.; Zhang, Wei; Fantini, Andrea; Degraeve, Robin; Clima, Sergiu; Garbin, Daniele; Robertson, J.; Guo, Y,; Zhang, J.F.; Marsland, John; Freitas, Pedro; Goux, Ludovic; Kar, Gouri Sankar (2019) -
Engineering and stack optimization of Cu-based selector devices for low power SCM applications
Barci, Marinela; Fantini, Andrea; Redolfi, Augusto; Kundu, Shreya; Devulder, Wouter; Opsomer, Karl; Delhougne, Romain; Goux, Ludovic; Kar, Gouri Sankar; Witters, Thomas (2018)