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The etching mechanisms of SiO2 in hydrofluoric acid

dc.contributor.authorVerhaverbeke, Steven
dc.contributor.authorTeerlinck, Ivo
dc.contributor.authorVinckier, Chris
dc.contributor.authorStevens, G.
dc.contributor.authorCartuyvels, Rudi
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-09-29T12:52:03Z
dc.date.available2021-09-29T12:52:03Z
dc.date.issued1994
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/439
dc.sourceIIOimport
dc.titleThe etching mechanisms of SiO2 in hydrofluoric acid
dc.typeJournal article
dc.contributor.imecauthorCartuyvels, Rudi
dc.contributor.imecauthorHeyns, Marc
dc.source.peerreviewno
dc.source.beginpage2852
dc.source.endpage2857
dc.source.journalJournal of the Electrochemical Society
dc.source.issue10
dc.source.volume141
imec.availabilityPublished - imec


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