Browsing Articles by imec author "987cf974b4c26298c72716befc7493d33d4080c3"
Now showing items 1-20 of 359
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45nm LSTP FET with FUSI gate on PVD-HfO2 with excellent drivability by advanced PDA treatment
Mitsuhashi, Riichirou; Yamamoto, Kazuhiko; Hayashi, S.; Rothschild, Aude; Kubicek, Stefan; Veloso, Anabela; Van Elshocht, Sven; Jurczak, Gosia; De Gendt, Stefan; Biesemans, Serge; Niwa, M. (2005) -
A chemisorbed interfacial layer for seeding atomic layer deposition on graphite
Brown, Anton; Greenwood, John; Lockhart de la Rosa, Cesar Javier; Gonzalez, Miriam C. Rodriguez; Verguts, Ken; Brems, Steven; Zhang, Haodong; Hirsch, Brandon E.; De Gendt, Stefan; Delabie, Annelies; Caymax, Matty; Teyssandier, Joan; De Feyter, Steven (2021) -
A comparative X-ray photoelectron spectroscopy and medium-energy ion-scattering study of ultra-thin, Hf-based high-k films
Sygellou, L; Ladas, S; Reading, M.A.; van den Berg, J.A.; Conard, Thierry; De Gendt, Stefan (2010-03) -
A detailed study on the growth of thin oxide layers on silicon using ozonated solutions
De Smedt, Frank; Vinckier, Chris; Cornelissen, Ingrid; De Gendt, Stefan; Heyns, Marc (2000) -
A nanoanalytical investigation of elemental distributions in high-k dielectric gate stacks on silicon
Docherty, F.T.; MacKenzie, M.; Craven, A.J.; McComb, D.W.; De Gendt, Stefan; McFadzean, S.; McGilvery, C.M. (2008-01) -
A route towards the fabrication of 2D heterostructures using atomic layer etching combined with selective conversion
Heyne, Markus; Marinov, Daniil; Braithwaite, Nicholas; Goodyear, Andy; de Marneffe, Jean-Francois; Cooke, Mike; Radu, Iuliana; Neyts, Erik C.; De Gendt, Stefan (2019) -
A single pulse charge pumping technique for fast measurements of interface states
Lin, L.; Ji, Zhigang; Zhang, Jian Fu; Zhang, Wei Dong; Kaczer, Ben; De Gendt, Stefan; Groeseneken, Guido (2011) -
A study of Joule heating-induced breakdown of carbon nanotube interconnects
Santini, Claudia; Vereecken, Philippe; Volodin, Alexander; Groeseneken, Guido; De Gendt, Stefan; Van Haesendonck, Chris (2011) -
A study of relaxation current in high-k gate stacks
Xu, Zhen; Pantisano, Luigi; Kerber, Andreas; Degraeve, Robin; Cartier, Eduard; De Gendt, Stefan; Heyns, Marc; Groeseneken, Guido (2004-03) -
A synchrotron radiation photoelectron spectroscopy study on atomic-scale wet etching of InAs (111)-A and (111)-B in acidic peroxide solutions: surface chemistry versus kinetics
Abrenica, Graniel; Lebedev, M. V.; Fingerle, M.; Arnauts, Sophia; Calvet, W.; Mayer, T.; De Gendt, Stefan; van Dorp, Dennis (2022) -
A wet chemical method for the determination of thickness of SiO2 layers below the nanometer level
De Smedt, Frank; Stevens, G.; De Gendt, Stefan; Cornelissen, Ingrid; Arnauts, Sophia; Meuris, Marc; Heyns, Marc; Vinckier, Chris (1999) -
Abrupt breakdown in dielectric/metal gate stacks: a potential reliability limitation?
Kauerauf, Thomas; Degraeve, Robin; Zahid, Mohammed; Cho, Moon Ju; Kaczer, Ben; Roussel, Philippe; Groeseneken, Guido; Maes, Herman; De Gendt, Stefan (2005) -
Accurate gate impedance determination on ultraleaky MOSFETs by fitting to a three-lumped-parameter model at frequencies from DC to RF
San Andres Serrano, Enrique; Pantisano, Luigi; Ramos, Javier; Roussel, Philippe; O'Sullivan, Barry; Toledano Luque, Maria; De Gendt, Stefan; Groeseneken, Guido (2007) -
Achieving conduction band-edge effective work functions by La2O3 capping of hafnium silicates
Ragnarsson, Lars-Ake; Chang, Vincent; Yu, HongYu; Cho, Hag-Ju; Conard, Thierry; Yin, KaiMin; Delabie, Annelies; Swerts, Johan; Schram, Tom; De Gendt, Stefan; Biesemans, Serge (2007-06) -
Advanced cleaning for the growth of ultrathin gate oxide
Mertens, Paul; Bearda, Twan; Houssa, Michel; Loewenstein, Lee; Cornelissen, Ingrid; De Gendt, Stefan; Kenis, Karine; Teerlinck, Ivo; Vos, Rita; Meuris, Marc; Heyns, Marc (1999) -
Advanced interconnects: materials, processing, and reliability
Baklanov, Mikhaïl; Adelmann, Christoph; Zhao, Larry; De Gendt, Stefan (2015) -
Advanced nanoanalysis of a Hf-based high-k dielectric stack prior to activation
MacKenzie, M.; Craven, A.J.; McComb, D.W.; De Gendt, Stefan; Docherty, F.T.; McGilvery, C.M.; McFadzean, S. (2007) -
ALD and parasitic growth characteristics of the tetrakisethylmethylamino hafnium TEMAH/H2O process
Nyns, Laura; Delabie, Annelies; Swerts, Johan; Van Elshocht, Sven; De Gendt, Stefan (2010) -
Alternative high-k dielectrics for semiconductor applications
Van Elshocht, Sven; Adelmann, Christoph; Clima, Sergiu; Pourtois, Geoffrey; Conard, Thierry; Delabie, Annelies; Franquet, Alexis; Lehnen, Peer; Meersschaut, Johan; Menou, Nicolas; Popovici, Mihaela Ioana; Richard, Olivier; Schram, Tom; Wang, Xin Peng; Hardy, An; Dewulf, Daan; Van Bael, Marlies; Blomberg, T.; Pierreux, Dieter; Swerts, Johan; Maes, Jan; Wouters, Dirk; De Gendt, Stefan; Kittl, Jorge (2009) -
Amorphous gadolinium aluminate as a dielectric and sulfur for indium phosphide passivation
van Dorp, Dennis; Nyns, Laura; Cuypers, Daniel; Ivanov, Tsvetan; Brizzi, Simone; Tallarida, Massimo; Fleischmann, Claudia; Hönicke, Philipp; Müller, Matthias; Richard, Olivier; Schmeisser, Dieter; De Gendt, Stefan; Lin, Dennis; Adelmann, Christoph (2019)