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Substrate orientation, doping and plasma frequency dependencies of structural defect formation in hydrogen plasma treated silicon

dc.contributor.authorUlyashin, A.
dc.contributor.authorJob, R.
dc.contributor.authorFahrner, W.
dc.contributor.authorRichard, Olivier
dc.contributor.authorBender, Hugo
dc.contributor.authorClaeys, Cor
dc.contributor.authorSimoen, Eddy
dc.contributor.authorGrambole, D.
dc.date.accessioned2021-10-14T23:25:56Z
dc.date.available2021-10-14T23:25:56Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6898
dc.sourceIIOimport
dc.titleSubstrate orientation, doping and plasma frequency dependencies of structural defect formation in hydrogen plasma treated silicon
dc.typeJournal article
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage13037
dc.source.endpage13045
dc.source.journalJournal of Physics - Condensed Matter
dc.source.issue48
dc.source.volume14
imec.availabilityPublished - imec
imec.internalnotesSpecial issue containing papers presented at the Conference on Extended Defects in Semiconductors - EDS; Bologna, Italy; June 2002


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