A 0.35µm BiCMOS process with selective epitaxial SiGe bipolar transistors

Kuhn, RudigerRudigerKuhnDecoutere, StefaanStefaanDecoutereCaymax, MattyMattyCaymaxVleugels, FrankFrankVleugelsVerschooten, EricEricVerschootenLoo, RogerRogerLooLoheac, J. L.J. L.Loheac2021-10-062021-10-061999https://imec-publications.be/handle/20.500.12860/3581A 0.35µm BiCMOS process with selective epitaxial SiGe bipolar transistorsProceedings paper