Use of a purged FOUP to improve H-terminated silicon surface stability prior to epitaxial growth

Wostyn, KurtKurtWostynRondas, DirkDirkRondasKenis, KarineKarineKenisLoo, RogerRogerLooHikavyy, AndriyAndriyHikavyyDouhard, BastienBastienDouhardMertens, PaulPaulMertensHolsteyns, FrankFrankHolsteynsDe Gendt, StefanStefanDe GendtD'Urzo, LuciaLuciaD'UrzoVan Autryve, LucLucVan Autryve2021-10-222021-10-222014https://imec-publications.be/handle/20.500.12860/24835Use of a purged FOUP to improve H-terminated silicon surface stability prior to epitaxial growthProceedings paperhttp://ecst.ecsdl.org/content/64/6/669.abstract