Arsenic and phosphorus co-implantation for deep-submicron CMOS gate and source/drain engineering

Augendre, EmmanuelEmmanuelAugendreDe Keersgieter, AnAnDe KeersgieterKubicek, StefanStefanKubicekRedolfi, AugustoAugustoRedolfiVan Laer, JorisJorisVan LaerBadenes, GonçalGonçalBadenes2021-10-142021-10-142001https://imec-publications.be/handle/20.500.12860/5018Arsenic and phosphorus co-implantation for deep-submicron CMOS gate and source/drain engineeringProceedings paper