In-situ passivation combined with GaN buffer optimization for extremely low current dispersion and low gate leakage in Si3N4/AlGaN/GaN HEMT devices on Si (111)

Germain, MarianneMarianneGermainCheng, KaiKaiChengDerluyn, JoffJoffDerluynDegroote, StefanStefanDegrooteDas, JoJoDasLorenz, AnneAnneLorenzMarcon, DenisDenisMarconVan Hove, MarleenMarleenVan HoveLeys, MaartenMaartenLeysBorghs, GustaafGustaafBorghs2021-10-172021-10-1720081610-1634https://imec-publications.be/handle/20.500.12860/13759In-situ passivation combined with GaN buffer optimization for extremely low current dispersion and low gate leakage in Si3N4/AlGaN/GaN HEMT devices on Si (111)Journal article