Horiguchi, NaotoNaotoHoriguchiNoda, TaijiTaijiNodaWitters, LiesbethLiesbethWittersMitard, JeromeJeromeMitardRosseel, ErikErikRosseelHellings, GeertGeertHellingsVrancken, ChristaChristaVranckenEyben, PierrePierreEybenBender, HugoHugoBenderThean, AaronAaronTheanVandervorst, WilfriedWilfriedVandervorst2021-10-212021-10-212013https://imec-publications.be/handle/20.500.12860/22500Kinetic Monte Carlo simulations for dopant diffusion and defects in Si and SiGeProceedings paper