Quantitative 3-D model to explain large single trap charge variability in vertical NAND memory

Verreck, DevinDevinVerreckArreghini, AntonioAntonioArreghiniBastos, JoaoJoaoBastosSchanovsky, FranzFranzSchanovskyMitterbauer, FerdinandFerdinandMitterbauerKernstock, C.C.KernstockKarner, MarkusMarkusKarnerDegraeve, RobinRobinDegraeveVan den Bosch, GeertGeertVan den BoschFurnemont, ArnaudArnaudFurnemont2021-10-272021-10-272019https://imec-publications.be/handle/20.500.12860/34376Quantitative 3-D model to explain large single trap charge variability in vertical NAND memoryProceedings paper