Stress in Silicon-Germanium Nanowires: Layout Dependence and Imperfect Source/Drain Epitaxial Stressors

Eneman, GeertGeertEnemanVeloso, AnabelaAnabelaVelosoFavia, PaolaPaolaFaviaHikavyy, AndriyAndriyHikavyyPorret, ClémentClémentPorretArimura, HiroakiHiroakiArimuraDe Keersgieter, AnAnDe KeersgieterPourtois, GeoffreyGeoffreyPourtoisLoo, RogerRogerLooSpessot, AlessioAlessioSpessotMatagne, PhilippePhilippeMatagneRyckaert, JulienJulienRyckaertHoriguchi, NaotoNaotoHoriguchi2022-02-212022-02-2120210018-9383WOS:000711645500011https://imec-publications.be/handle/20.500.12860/38946Stress in Silicon-Germanium Nanowires: Layout Dependence and Imperfect Source/Drain Epitaxial StressorsJournal article10.1109/TED.2021.3076754WOS:000711645500011