On the impact of dopants and Si structure dimensions on {113}-defect formation during in-situ 2 MeV electron-irradiation in an UHVEM

Vanhellemont, JanJanVanhellemontAnada, SatoshiSatoshiAnadaNagase, TakeshiTakeshiNagaseYasuda, H.H.YasudaSchulze, AndreasAndreasSchulzeBender, HugoHugoBenderRooyackers, RitaRitaRooyackersVandooren, AnneAnneVandooren2021-10-222021-10-222014https://imec-publications.be/handle/20.500.12860/24739On the impact of dopants and Si structure dimensions on {113}-defect formation during in-situ 2 MeV electron-irradiation in an UHVEMMeeting abstract