Investigation of instrinsic transistor performance of advanced CMOS devices with 2.5 nm NO gate oxides

Kubicek, StefanStefanKubicekHenson, W. K.W. K.HensonDe Keersgieter, AnAnDe KeersgieterBadenes, GonçalGonçalBadenesJansen, PhilippePhilippeJansenvan Meer, HansHansvan MeerKerr, DanielDanielKerrNaem, AbdallaAbdallaNaemDeferm, LudoLudoDefermDe Meyer, KristinKristinDe Meyer2021-10-062021-10-061999https://imec-publications.be/handle/20.500.12860/3575Investigation of instrinsic transistor performance of advanced CMOS devices with 2.5 nm NO gate oxidesProceedings paper