On the distribution of oxide defect levels in Al2O3 and HfO2 high-k dielectrics deposited on InGaAs Metal-Oxide-Semiconductor devices studied by Capacitance-Voltage hysteresis

Vais, AbhitoshAbhitoshVaisFranco, JacopoJacopoFrancoLin, DennisDennisLinPutcha, VamsiVamsiPutchaSioncke, SonjaSonjaSionckeMocuta, AndaAndaMocutaCollaert, NadineNadineCollaertThean, AaronAaronTheanDe Meyer, KristinKristinDe Meyer2021-10-242021-10-2420170021-8979https://imec-publications.be/handle/20.500.12860/29615On the distribution of oxide defect levels in Al2O3 and HfO2 high-k dielectrics deposited on InGaAs Metal-Oxide-Semiconductor devices studied by Capacitance-Voltage hysteresisJournal articlehttp://aip.scitation.org/doi/full/10.1063/1.4980170