Behavior of the 1/f noise and electron mobility in 65 nm FD SOI nMOSFETs employing different tensile-strain-inducing techniques

Lukyanchikova, N.N.LukyanchikovaGarbar, N.N.GarbarKudina, V.V.KudinaSmolanka, A.A.SmolankaSimoen, EddyEddySimoenClaeys, CorCorClaeys2021-10-162021-10-162007https://imec-publications.be/handle/20.500.12860/12525Behavior of the 1/f noise and electron mobility in 65 nm FD SOI nMOSFETs employing different tensile-strain-inducing techniquesProceedings paper