Impact of the diameter of vertical nanowire-tunnel FETs with Si and SiGe source composition on analog parameters

Bordallo, C. C. MC. C. MBordalloSivieri, V. BV. BSivieriMartino, J. A.J. A.MartinoAgopian, P. G. DP. G. DAgopianRooyackers, RitaRitaRooyackersVandooren, AnneAnneVandoorenSimoen, EddyEddySimoenThean, AaronAaronTheanClaeys, CorCorClaeys2021-10-222021-10-222015https://imec-publications.be/handle/20.500.12860/25003Impact of the diameter of vertical nanowire-tunnel FETs with Si and SiGe source composition on analog parametersProceedings paperhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7063821