Variability study with CD-SEM metrology for STT-MRAM: Correlation analysis between physical dimensions and electrical property of the memory element

Ohashi, TakeyoshiTakeyoshiOhashiYamaguchi, AtuskoAtuskoYamaguchiHasumi, KazuhisaKazuhisaHasumiInoue, OsamuOsamuInoueIkata, MasamiMasamiIkataLorusso, GianGianLorussoDonadio, Gabriele LucaGabriele LucaDonadioYasin, FarrukhFarrukhYasinRao, SiddharthSiddharthRaoKar, Gouri SankarGouri SankarKar2021-10-242021-10-242017https://imec-publications.be/handle/20.500.12860/29102Variability study with CD-SEM metrology for STT-MRAM: Correlation analysis between physical dimensions and electrical property of the memory elementMeeting abstract10.1117/12.2257908