Molecular Beam Epitaxy study of a common a-GeO2 interfacial passivation layer for Ge- and GaAs-based MOS heterostructures

Merckling, ClementClementMercklingPenaud, JulienJulienPenaudBellenger, FlorenceFlorenceBellengerKohen, DavidDavidKohenBrammertz, GuyGuyBrammertzAlian, AliRezaAliRezaAlianPourtois, GeoffreyGeoffreyPourtoisScarrozza, MarcoMarcoScarrozzaHoussa, MichelMichelHoussaEl-Kazzi, MarioMarioEl-KazziDekoster, JohanJohanDekosterCaymax, MattyMattyCaymaxMeuris, MarcMarcMeurisHeyns, MarcMarcHeyns2021-10-182021-10-182009https://imec-publications.be/handle/20.500.12860/15853Molecular Beam Epitaxy study of a common a-GeO2 interfacial passivation layer for Ge- and GaAs-based MOS heterostructuresProceedings paper