Interfacial Properties of nMOSFETs With Different Al2O3 Capping Layer Thickness and TiN Gate Stacks

Wang, DanghuiDanghuiWangXu, TianhanTianhanXuSimoen, EddyEddySimoenGovoreanu, BogdanBogdanGovoreanuClaeys, CorCorClaeysZhang, YangYangZhang2022-06-162021-11-022022-06-1620210018-9383WOS:000622100700001https://imec-publications.be/handle/20.500.12860/38102Interfacial Properties of nMOSFETs With Different Al2O3 Capping Layer Thickness and TiN Gate StacksJournal article10.1109/TED.2020.3047356WOS:000622100700001LOW-FREQUENCY NOISEEXTRACTIONMETAL