1mA/μm-ION strained SiGe45%-IFQW pFETs with raised and embedded S/D

Mitard, JeromeJeromeMitardWitters, LiesbethLiesbethWittersHellings, GeertGeertHellingsKrom, RaymondRaymondKromFranco, JacopoJacopoFrancoEneman, GeertGeertEnemanHikavyy, AndriyAndriyHikavyyVincent, BenjaminBenjaminVincentLoo, RogerRogerLooFavia, PaolaPaolaFaviaDekkers, HaroldHaroldDekkersAltamirano Sanchez, EfrainEfrainAltamirano SanchezVanderheyden, AnneliesAnneliesVanderheydenVanhaeren, DanielleDanielleVanhaerenEyben, PierrePierreEybenTakeoka, ShinjiShinjiTakeokaYamaguchi, ShinpeiShinpeiYamaguchiVan Dal, MarkMarkVan DalWang, Wei-EWei-EWangHong, Sug-HunSug-HunHongVandervorst, WilfriedWilfriedVandervorstDe Meyer, KristinKristinDe MeyerBiesemans, SergeSergeBiesemansAbsil, PhilippePhilippeAbsilHoriguchi, NaotoNaotoHoriguchiHoffmann, Thomas Y.Thomas Y.Hoffmann2021-10-192021-10-192011https://imec-publications.be/handle/20.500.12860/194391mA/μm-ION strained SiGe45%-IFQW pFETs with raised and embedded S/DProceedings paper