Interface charge trapping induced flatBand voltage shift during plasma-enhanced atomic layer deposition in through silicon via

Li, YunlongYunlongLiSuhard, SamuelSamuelSuhardVan Huylenbroeck, StefaanStefaanVan HuylenbroeckMeersschaut, JohanJohanMeersschautVan Besien, ElsElsVan BesienStucchi, MicheleMicheleStucchiCroes, KristofKristofCroesBeyer, GeraldGeraldBeyerBeyne, EricEricBeyne2021-10-242021-10-2420170021-8979https://imec-publications.be/handle/20.500.12860/28812Interface charge trapping induced flatBand voltage shift during plasma-enhanced atomic layer deposition in through silicon viaJournal articlehttp://aip.scitation.org/doi/10.1063/1.5001026