Implementing cubic-phase HfO2 with $j-value ~ 30 in low-VT replacementgate pMOS devices for improved EOT-Scaling and reliability

Ragnarsson, Lars-AkeLars-AkeRagnarssonAdelmann, ChristophChristophAdelmannHiguchi, YuichiYuichiHiguchiOpsomer, KarlKarlOpsomerVeloso, AnabelaAnabelaVelosoChew, Soon AikSoon AikChewRohr, EricaEricaRohrVecchio, EmmaEmmaVecchioShi, XiaopingXiaopingShiDevriendt, KatiaKatiaDevriendtSebaai, FaridFaridSebaaiKauerauf, ThomasThomasKaueraufPawlak, MalgorzataMalgorzataPawlakSchram, TomTomSchramVan Elshocht, SvenSvenVan ElshochtHoriguchi, NaotoNaotoHoriguchiThean, AaronAaronThean2021-10-202021-10-202012https://imec-publications.be/handle/20.500.12860/21371Implementing cubic-phase HfO2 with $j-value ~ 30 in low-VT replacementgate pMOS devices for improved EOT-Scaling and reliabilityProceedings paper