Impact of silicon substrate, iron contamination and perimeter on saturation current and noise in n+p diodes

Vandamme, LorenzLorenzVandammeVandamme, EwoutEwoutVandammeDobbelsteen, J. J.J. J.Dobbelsteen2021-09-302021-09-301997https://imec-publications.be/handle/20.500.12860/2262Impact of silicon substrate, iron contamination and perimeter on saturation current and noise in n+p diodesJournal article