Pre-Epi Clean of SiGe 20%: GeH4 and HCl vs H2-based in-situ cleaning

Wostyn, KurtKurtWostynDhayalan, Sathish KumarSathish KumarDhayalanGencarelli, FedericaFedericaGencarelliMasaoku, ToruToruMasaokuIino, HideakiHideakiIinoYoshida, YukifumiYukifumiYoshidaKomori, KanaKanaKomoriDouhard, BastienBastienDouhardHikavyy, AndriyAndriyHikavyyLoo, RogerRogerLooHolsteyns, FrankFrankHolsteyns2021-10-262021-10-262018-05https://imec-publications.be/handle/20.500.12860/32280Pre-Epi Clean of SiGe 20%: GeH4 and HCl vs H2-based in-situ cleaningMeeting abstract