On the origin of mobility reduction in ultrathin EOT HK/MG CMOS devices: Impact from gate-stack and device architecture

Ragnarsson, Lars-AkeLars-AkeRagnarssonMitard, JeromeJeromeMitardHong, Sug-HunSug-HunHongTakeoka, ShinjiShinjiTakeokaTseng, JoshuaJoshuaTsengWang, Wei-EWei-EWangYamaguchi, ShinpeiShinpeiYamaguchiTrojman, LionelLionelTrojmanKauerauf, ThomasThomasKaueraufDe Keersgieter, AnAnDe KeersgieterSchram, TomTomSchramRohr, ErikaErikaRohrCollaert, NadineNadineCollaertJurczak, GosiaGosiaJurczakBourdelle, KonstantinKonstantinBourdelleNguyen, B-YB-YNguyenAbsil, PhilippePhilippeAbsilHoffmann, Thomas Y.Thomas Y.Hoffmann2021-10-192021-10-192011https://imec-publications.be/handle/20.500.12860/19651On the origin of mobility reduction in ultrathin EOT HK/MG CMOS devices: Impact from gate-stack and device architectureProceedings paper