Improvement of the Ferroelectric Response of La-Doped Hafnium Zirconium Oxide Employing Tungsten Oxide Interfacial Layer with Back-End-of-Line Compatibility

Kwon, DaeSeonDaeSeonKwonBizindavyi, JasperJasperBizindavyiDe, GourabGourabDeBelmonte, AttilioAttilioBelmonteDelabie, AnneliesAnneliesDelabieNyns, LauraLauraNynsKar, Gouri SankarGouri SankarKarVan Houdt, JanJanVan HoudtPopovici, Mihaela IoanaMihaela IoanaPopovici2024-09-252024-08-072024-09-2520241944-8244WOS:001279678500001https://imec-publications.be/handle/20.500.12860/44279Improvement of the Ferroelectric Response of La-Doped Hafnium Zirconium Oxide Employing Tungsten Oxide Interfacial Layer with Back-End-of-Line CompatibilityJournal article10.1021/acsami.4c08988WOS:001279678500001HFXZR1-XO2 THIN-FILMSPHASEHF0.5ZR0.5O2CHEMISTRYHFO2MEDLINE:39056583