Growth rate for the SEG of III-V compounds inside submicron STI trenches on Si (001) substrates by MOVPE: modeling and experiments

Jiang, SijiaSijiaJiangMerckling, ClementClementMercklingGuo, WeimingWeimingGuoWaldron, NiamhNiamhWaldronCaymax, MattyMattyCaymaxVandervorst, WilfriedWilfriedVandervorstSeefeldt, MarcMarcSeefeldtHeyns, MarcMarcHeyns2021-10-222021-10-2220140022-0248https://imec-publications.be/handle/20.500.12860/24009Growth rate for the SEG of III-V compounds inside submicron STI trenches on Si (001) substrates by MOVPE: modeling and experimentsJournal articlehttp://www.sciencedirect.com/science/article/pii/S0022024814000153