Increased radiation hardness of short-channel electron-irradiated Si1-xGex source/drain p-type metal oxide semiconductor field-effect transistors at higher Ge content

Nakashima, ToshiyukiToshiyukiNakashimaYoneoka, MasashiMasashiYoneokaTsunoda, IsaoIsaoTsunodaTakakura, KenichiroKenichiroTakakuraGonzalez, Mireia BMireia BGonzalezSimoen, EddyEddySimoenClaeys, CorCorClaeysYoshino, KenjiKenjiYoshino2021-10-212021-10-2120130021-4922https://imec-publications.be/handle/20.500.12860/22849Increased radiation hardness of short-channel electron-irradiated Si1-xGex source/drain p-type metal oxide semiconductor field-effect transistors at higher Ge contentJournal articlehttp://jjap.jsap.jp/link?JJAP/52/094201/