Gate conduction mechanisms and lifetime modeling of p-gate AlGaN/GaN high-electron-mobility transistors

Stockman, ArnoArnoStockmanMasin, FabrizioFabrizioMasinMeneghini, MatteoMatteoMeneghiniZanoni, EnricoEnricoZanoniMeneghesso, GaudenzioGaudenzioMeneghessoBakeroot, BenoitBenoitBakerootMoens, PeterPeterMoens2021-10-262021-10-2620180018-9383https://imec-publications.be/handle/20.500.12860/31860Gate conduction mechanisms and lifetime modeling of p-gate AlGaN/GaN high-electron-mobility transistorsJournal articlehttps://ieeexplore.ieee.org/document/8525132