Low temperature selective growth of heavily boron-doped germanium source /drain layers for advanced pMOS devices

Porret, ClémentClémentPorretVohra, AnuragAnuragVohraNakazaki, NobuyaNobuyaNakazakiHikavyy, AndriyAndriyHikavyyDouhard, BastienBastienDouhardMeersschaut, JohanJohanMeersschautBogdanowicz, JanuszJanuszBogdanowiczRosseel, ErikErikRosseelPourtois, GeoffreyGeoffreyPourtoisLanger, RobertRobertLangerLoo, RogerRogerLoo2021-10-292021-10-2920201862-6300https://imec-publications.be/handle/20.500.12860/35757Low temperature selective growth of heavily boron-doped germanium source /drain layers for advanced pMOS devicesJournal articlehttps://doi.org/10.1002/pssa.201900628