Impact of processing parameters on leakage current and defect behavior of n+p silicon junction diodes

Gramenova, EmiliaEmiliaGramenovaJansen, PhilippePhilippeJansenSimoen, EddyEddySimoenVanhellemont, JanJanVanhellemontDupas, LucLucDupasDeferm, LudoLudoDeferm2021-09-302021-09-301997https://imec-publications.be/handle/20.500.12860/1899Impact of processing parameters on leakage current and defect behavior of n+p silicon junction diodesProceedings paper