Back gate voltage and buried-oxide thickness influences on the series resistance of fully depleted SOI MOSFETs at 77 K

Nicolett, A. S.A. S.NicolettMartino, Joao AntonioJoao AntonioMartinoSimoen, EddyEddySimoenClaeys, CorCorClaeys2021-10-012021-10-011998https://imec-publications.be/handle/20.500.12860/2805Back gate voltage and buried-oxide thickness influences on the series resistance of fully depleted SOI MOSFETs at 77 KJournal article