Ray Chaudhuri, AsheshAsheshRay ChaudhuriBeamish, EricEricBeamishDu Bois, BertBertDu BoisGuell, P.P.GuellWalikar, A.A.WalikarVecchio, EmmaEmmaVecchioVossen, T.T.VossenPodkovskiy, AlexeyAlexeyPodkovskiyRenckens, W.W.RenckensBotermans, WouterWouterBotermansMarion, SanjinSanjinMarionOsman, HarisHarisOsmanDeshpande, ParuParuDeshpandeSeveri, SimoneSimoneSeveriVan Dorpe, PolPolVan Dorpe2026-07-232026-07-232025979-8-3315-6786-62380-9248https://imec-publications.be/handle/20.500.12860/59913We present the first successful demonstration of wafer-scale fabrication of solid-state nanopores using Extreme Ultraviolet (EUV) lithography. Specifically, we fabricated pores with a diameter down to approximately 10 nm within silicon nitride (Si3N4) membrane. Through a combination of direct patterning via EUV lithography and subsequent fabrication steps employing a spacer approach, we achieved highly uniform pores of precisely controlled dimensions across the entire wafer. The fabricated nanopores were thoroughly characterized in an aqueous environment, assessing their current-voltage (I-V) characteristics and noise performance. Device functionality was subsequently validated through the successful translocation of DNA molecules. Based on these findings, we project that this fabrication process demonstrates significant potential for realizing both single nanopores and multi-pore arrays with various tuneable dimensions within a single wafer, thereby targeting a wide range of applications.engProceedings paper10.1109/iedm50572.2025.11353639WOS:001701480300114