Impact of PECVD-prepared interfacial Si and SiGe layers on epitaxial Si films grown by PECVD (200 degrees C) and APCVD (1130 degrees C)

An, JunyangJunyangAnMaurice, Jean-LucJean-LucMauriceRoca i Cabarrocas, PerePereRoca i CabarrocasChen, WanghuaWanghuaChenDepauw, ValerieValerieDepauw2022-02-242022-02-2420210169-4332WOS:000620786300003https://imec-publications.be/handle/20.500.12860/39113Impact of PECVD-prepared interfacial Si and SiGe layers on epitaxial Si films grown by PECVD (200 degrees C) and APCVD (1130 degrees C)Journal article10.1016/j.apsusc.2021.149056WOS:000620786300003BUFFER LAYERSMART-CUTIII-VSILICONPLASMADEPOSITIONTHICKNESSGAAS