Interface trap characterization and Fermi-level pinning in Si-passivated Ge/HfO2 capacitors

Martens, KoenKoenMartensKaczer, BenBenKaczerRoussel, PhilippePhilippeRousselGroeseneken, GuidoGuidoGroesenekenMaes, HermanHermanMaes2021-10-162021-10-162005https://imec-publications.be/handle/20.500.12860/10854Interface trap characterization and Fermi-level pinning in Si-passivated Ge/HfO2 capacitorsMeeting abstract