Epitaxial CVD growth of ultra-thin Si passivation layers on strained Ge fin structures

Loo, RogerRogerLooArimura, HiroakiHiroakiArimuraCott, DaireDaireCottWitters, LiesbethLiesbethWittersPourtois, GeoffreyGeoffreyPourtoisSchulze, AndreasAndreasSchulzeDouhard, BastienBastienDouhardVanherle, WendyWendyVanherleEneman, GeertGeertEnemanRichard, OlivierOlivierRichardFavia, PaolaPaolaFaviaMitard, JeromeJeromeMitardMocuta, DanDanMocutaLanger, RobertRobertLangerCollaert, NadineNadineCollaert2021-10-252021-10-252018-022162-8769https://imec-publications.be/handle/20.500.12860/31228Epitaxial CVD growth of ultra-thin Si passivation layers on strained Ge fin structuresJournal article10.1149/2.0191802jsshttp://jss.ecsdl.org/cgi/content/abstract/7/2/P66.