Germanium deep-submicron p-FET and n-FET devices, fabricated on germanium-on-insulator substrates

Meuris, MarcMarcMeurisDe Jaeger, BriceBriceDe JaegerVan Steenbergen, JanJanVan SteenbergenBonzom, RenaudRenaudBonzomCaymax, MattyMattyCaymaxHoussa, MichelMichelHoussaKaczer, BenBenKaczerLeys, FrederikFrederikLeysMartens, KoenKoenMartensOpsomer, KarlKarlOpsomerPourghaderi, Mohammad AliMohammad AliPourghaderiSatta, AlessandraAlessandraSattaSimoen, EddyEddySimoenTerzieva, ValentinaValentinaTerzievaVan Moorhem, ElsElsVan MoorhemWinderickx, GillisGillisWinderickxLoo, RogerRogerLooClarysse, TrudoTrudoClarysseConard, ThierryThierryConardDelabie, AnneliesAnneliesDelabieHellin, DavidDavidHellinJanssens, TomTomJanssensOnsia, BartBartOnsiaSioncke, SonjaSonjaSionckeMertens, PaulPaulMertensSnow, JimJimSnowVan Elshocht, SvenSvenVan ElshochtVandervorst, WilfriedWilfriedVandervorstZimmerman, PaulPaulZimmermanBrunco, DavidDavidBruncoRaskin, G.G.RaskinLetertre, F.F.LetertreAkatsu, T.T.AkatsuBillon, T.T.BillonHeyns, MarcMarcHeyns2021-10-162021-10-162007https://imec-publications.be/handle/20.500.12860/12575Germanium deep-submicron p-FET and n-FET devices, fabricated on germanium-on-insulator substratesBook chapter