Pushing the limits of ab-initio-NEGF transport using efficient dissipative Mode-Space algorithms for realistic simulations of low-dimensional semiconductors including their oxide interfaces

Afzalian, AryanAryanAfzalianDucry, FabianFabianDucry2024-02-052024-01-112024-02-0520231946-1569WOS:001117703800076https://imec-publications.be/handle/20.500.12860/43388Pushing the limits of ab-initio-NEGF transport using efficient dissipative Mode-Space algorithms for realistic simulations of low-dimensional semiconductors including their oxide interfacesProceedings paper978-4-86348-803-8WOS:001117703800076