Electrical properties of strained Si MOSFETs by high-fluence electron-irradiation

Takakura, K.K.TakakuraAoki, Y.Y.AokiHayama, K.K.HayamaOyana, H.H.OyanaSimoen, EddyEddySimoenClaeys, CorCorClaeys2021-10-162021-10-162007https://imec-publications.be/handle/20.500.12860/12965Electrical properties of strained Si MOSFETs by high-fluence electron-irradiationOral presentation