Tensile strained GeSn on Si by solid phase epitaxy for high mobility FET devices

Lieten, RubenRubenLietenJevasuwan, WipakornWipakornJevasuwanUchida, NoriNoriUchidaHattori, H.H.HattoriSeo, Jin WonJin WonSeoLocquet, Jean-PierreJean-PierreLocquetMaeda, TatsuroTatsuroMaeda2021-10-212021-10-212013https://imec-publications.be/handle/20.500.12860/22696Tensile strained GeSn on Si by solid phase epitaxy for high mobility FET devicesOral presentation